Gain recovery dynamics in semiconductor optical amplifier

Ginovart, Frédéric; Simon, Jean Claude; Valiente, I.

doi:10.1016/s0030-4018(01)01574-7

Cited by 33 publications

(11 citation statements)

References 8 publications

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“…The factor of two accounts for the unpolarized nature of ASE [40]. The effects of ASE on the carrier dynamics in the semiconductor optical amplifier can be accounted for by using the models presented in [41,42].…”

Section: Soa Design Modelling and Analysismentioning

confidence: 99%

Lossless WDM PON Photonic Integrated Receivers Including SOAs

et al. 2019

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The role of a semiconductor optical amplifier (SOA) for amplifying downstream traffic at optical network terminals (ONT) within a silicon-photonics integrated receiver in a high capacity passive optical network (PON) is investigated. The nearly traveling wave SOA effects are evaluated by considering fabrication and link loss constraints through numerical analysis and experimental validation. The impact of hybrid integration of a SOA chip on a silicon on insulator (SOI) photonic chip using the flip chip bonding technique on SOA design is evaluated through numerical analysis of a multi section cavity model. The performance of the proposed ONT receiver design employing twin parallel SOAs is evaluated experimentally on a 32 × 25 Gb/s OOK WDM transmission system considering cross gain modulation (XGM) and amplified spontaneous emission (ASE) constraints. The XGM impact is evaluated through 32 channel wavelength division multiplexing (WDM) transmission and a likely PON worst case scenario of high channel power difference (~10 dB) between adjacent channels. The impact of ASE is evaluated through the worst-case polarization condition, i.e., when all of the signal is coupled to only one. Successful transmission was achieved in both worst-case conditions with limited impact on performance. SOA results indicate that a maximum residual facet reflectivity of 4 × 10−4 for the chip-bonded device can lead to a power penalty below 2 dB in a polarization-diversity twin SOAs receiver.

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Section: Soa Design Modelling and Analysismentioning

confidence: 99%

Lossless WDM PON Photonic Integrated Receivers Including SOAs

et al. 2019

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“…The dynamics of the gain compression and its associated phase shift has been studied by quite a number of groups, e.g. [83,[86][87][88][89][90][91][92][93][94][95][96][97][98][99][100][101] with good summaries of the varying contributing processes and their distinct timescales being available e.g. [75,76,102].…”

Section: Carrier Induced Switching Speed Limitationsmentioning

confidence: 99%

“…The recovery time is also affected by the input power, the polarization, the level of bias current applied to the SOA, the dimensions and design of the active region, and the pump wavelength, e.g. [92,94,[97][98][99][100][101]. This makes it hard to compare recovery times in any absolute sense, but nonetheless some broad generalizations of structural impacts, and mitigating approaches is in order.…”

Section: Carrier Induced Switching Speed Limitationsmentioning

confidence: 99%

Materials and Structures for Nonlinear Photonics

Gai

Choi

Madden

et al. 2015

Springer Series in Optical Sciences

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“…The speed of conventional bulk SOA operation is limited by the temporal response of gain and phase recovery. The typical value for phase-recovery times is several hundreds of pico-seconds, which limits the optical logic speeds to lower than 100 Gb/s [6]. The realization of quantum-dot (QD) semiconductor optical amplifiers (QD-SOAs) provides an opportunity for ultra-high speed all-optical switching.…”

Section: Introductionmentioning

confidence: 99%

“…Similarly, the microstrip/slot/microstrip technique or microstrip/coaxial transitions suppose that we master a multilayered circuit and the manufacturing cost is more expensive in comparison to a single layer [5]. The Schiffman lines hybrid [6], presents a convenient solution while having great losses due to its complex structure with many bent lines at an 90°angle, especially at higher frequencies (centimetric waves and beyond).…”

Section: Introductionmentioning

confidence: 99%

All-optical logic performance of quantum-dot semiconductor amplifier-based devices

Sun

Wang

Dong

et al. 2005

Microw. Opt. Technol. Lett.

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The performances of all‐optical logic gates AND, OR, XOR, and NOT, based on quantum‐dot semiconductor optical amplifier (QD‐SOA) devices, are simulated. The saturation power, optical gain, and optical phase response of a QD‐SOA is analyzed numerically using a rate‐equation model of quantum dots embedded in a wetting layer. The calculated response is used to model the performance of the logic gates. The impact of the injection current and the input‐signal power on the system's quality factor are studied. For the parameters used in this paper, all‐optical logic gates using QD‐SOA are capable of operating at speeds of ∼250 Gb/s. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 29–35, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21252

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Gain recovery dynamics in semiconductor optical amplifier

Cited by 33 publications

References 8 publications

Lossless WDM PON Photonic Integrated Receivers Including SOAs

Lossless WDM PON Photonic Integrated Receivers Including SOAs

Materials and Structures for Nonlinear Photonics

All-optical logic performance of quantum-dot semiconductor amplifier-based devices

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