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We report the molecular beam epitaxy growth of (Al) GaAsSb/AlAsSb Bragg reflectors around the 1.55 μm wavelength region. Mirrors with 96% reflectivity have been achieved by using ten pairs of quarter wavelength layers. This demonstrates the capability of the (Al) GaAsSb/AlAsSb system to achieve efficient Bragg mirrors lattice matched to InP substrates.

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No abstract

We report the molecular beam epitaxy growth of (Al)GaSb/AlSb Bragg mirrors around the 1.55 μm wavelength region. Mirrors with 97% reflectivity have been achieved by using 10 pairs of (Al)GaSb (1048 Å) and AlSb (1207 Å) quarter wavelength layers. This demonstrates the capability of the antimonide system to obtain efficient Bragg mirrors grown on GaAs substrates.