GaInN quantum wells grown on facets of selectively grown GaN stripes

Neubert, Barbara; Brückner, Peter; Habel, Frank; Scholz, F.; Riemann, T.; Christen, J.; Beer, M.; Zweck, J

doi:10.1063/1.2126798

Cited by 65 publications

(61 citation statements)

References 13 publications

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“…The facets of these triangular GaN stripes are {1101} planes, in which we are interested. Five GaInN quantum wells separated by GaN barriers are grown on top of these stripes and finally covered by a 200 nm thick p-GaN layer [6,7]. Semitransparent nickel-gold pads are deposited on top to allow for electrical contact while still permitting optical access.…”

Section: Methodsmentioning

confidence: 99%

High quantum efficiency of semipolar GaInN/GaN quantum wells

Feneberg

Lipski

Schirra

et al. 2008

Phys. Status Solidi (c)

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The development of efficient GaInN/GaN based light emitting devices is hampered by built‐in electric fields. These fields, arising from piezoelectric and spontaneous polarization, separate electron and hole wavefunctions and reduce their spatial overlap. Therefore, the internal quantum efficiency is drastically reduced in the presence of built‐in fields. To decrease the detrimental influence of the polarization fields on quantum efficiency, growth on non‐ or semipolar crystal facets is conducted. We investigate samples containing quantum wells grown on the {1$\bar 1$01} facet (tilt angle from (0001) is θ = 62°) of selectively grown GaN stripes and compare them to samples grown on the commonly used c plane. We experimentally determine direction and strength of built‐in polarization fields. These fields are used to compute overlap integrals and to estimate the internal quantum efficiency of semipolar quantum wells in comparison to polar and nonpolar ones. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

High quantum efficiency of semipolar GaInN/GaN quantum wells

Feneberg

Lipski

Schirra

et al. 2008

Phys. Status Solidi (c)

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“…As illustrated in Fig. 5, these orientations provide unique opportunities for tailoring polarization properties [36,66,83,99]. However, early attempts to achieve non-polar GaN by growth on foreign substrates, such as a-plane GaN on r-plane sapphire, resulted in unacceptably high densities of extended defects such as TDs and stacking faults [18].…”

Section: Polarization Effectsmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

377

268

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Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid-state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid-state lighting that could conceivably achieve "ultra-high," 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.

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“…In order to diminish the effects of strain and polarization, several groups have investigated the growth of non-polar and semi-polar planes of GaN [3,4]. Regrowth on patterned Ga-polar GaN templates for use in epitaxial lateral overgrowth (ELO) [5] and to obtain quantum wells of non-polar and semi-polar crystal orientations have also been studied, however all reports were investigated on micron scale features [6,7]. The patterning of nanoscale features, for optoelectronic devices, is traditionally done through electron-beam lithography, but can also be accomplished over large areas through holographic lithography.…”

Section: Introductionmentioning

confidence: 99%

MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructures

Fichtenbaum¹,

Neufeld

Schaake

et al. 2007

Physica Status Solidi (b)

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PACS 68.37. Hk, 68.37.Ps, 81.15.Gh, 81.16.Rf N-polar (000 1) and Ga-polar (0001) GaN templates were patterned with holographic lithography and etched to form nanopillars (NP) and nanostripes (NS) arrays, upon which InGaN and GaN was subsequently regrown by metal organic chemical vapor deposition (MOCVD). A wide range of growth conditions were explored to determine the structural impact of the growth conditions. The results were evaluated by scanning electron microscopy (SEM), and transmission electron microscopy (TEM). It was observed that the initial polarity of the GaN template used to form the pillar or stripe nanostructures had a significant impact upon the results of the regrowth. The Ga-polar NP exhibited (0001), {01 10}, and {01 11} facets, while the N-polar NP exhibited (000 1) and {01 10} facets. The NS samples also exhibited different facet formation depending upon the initial polarity.

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GaInN quantum wells grown on facets of selectively grown GaN stripes

Cited by 65 publications

References 13 publications

High quantum efficiency of semipolar GaInN/GaN quantum wells

High quantum efficiency of semipolar GaInN/GaN quantum wells

Research challenges to ultra‐efficient inorganic solid‐state lighting

MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructures

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