GaInNAs(Sb) surface normal devices

Calvez, S.; Laurand, N.; Sun, Handong; Weda, Jelmer J. A.; Burns, D.; Dawson, Martin D.; Härkönen, Antti; Jouhti, T.; Pessa, M.; Hopkinson, M.; Poitras, Daniel; Gupta, J. A.; Leburn, C.G.; Brown, C.T.A.; Sibbett, W.

doi:10.1002/pssa.200777460

Cited by 10 publications

(7 citation statements)

References 46 publications

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“…Suitable compounds include GaAsSb/GaAs QWs [91], InGaAsN/GaAs QWs [92] and In(Ga)As QDs [81], all of which have been introduced and developed to push GaAs-based technology to 1300 nm for telecommunication applications.…”

Section: Nm-1250 Nm Sdlsmentioning

confidence: 99%

“…The addition of a small amount of nitrogen to InGaAs not only reduces the alloy lattice constant (see Fig. 4) but also introduces a large reduction in bandgap and a reduced temperature sensitivity [92]. This technique has been used to create diamond heatspreader-bonded SDLs with 10-12QWs with emission covering the 1150-1250 nm band under 780-810 nm pump- Figure 21 (online color at: www.lpr-journal.org) 1220 nm GaInNAs SDL performance [68].…”

Section: Nm-1250 Nm Sdlsmentioning

confidence: 99%

See 1 more Smart Citation

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

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154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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Section: Nm-1250 Nm Sdlsmentioning

confidence: 99%

Section: Nm-1250 Nm Sdlsmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

Self Cite

154

View full text Add to dashboard Cite

show abstract

“…The latter application takes advantage of the OPSDLs external cavity. Recently, this feature has also been utilised to great effect in the intracavity frequency doubling of these sources to the red region of the visible spectrum [41,55] -an attractive application for 12XX nm wavelength OPSDLs [56]. This transition to longer wavelength devices was initially supported by the parallel development of long-wavelength [57], vertical cavity surface emitting lasers (VCSELs) [14].…”

Section: Gainnas-based Opsdls > 12 μMmentioning

confidence: 99%

High‐brightness long‐wavelength semiconductor disk lasers

Schulz¹,

Hopkins

Rattunde

et al. 2008

Laser & Photonics Reviews

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121

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A review on the recent developments in the field of long-wavelength (λ > 1.2 μm) high-brightness opticallypumped semiconductor disk lasers (OPSDLs) is presented. As thermal effects have such a crucial impact on the laser performance particular emphasis is given to modelling the thermal behaviour and optimisation of the heat-sinking. Selected OPSDL devices, realized in different III-V and IV-VI semiconductor material systems, with corresponding emission wavelengths between 1.2 μm and 5.3 μm are presented. Specific applications in this broad spectral range are addressed and methods to obtain high output power are discussed in terms of the underlying material properties and device operating principles.Schematic OPSDL setup, two-dimensional far-field profile of an emitted beam and typical emission spectrum of an (AlGaIn)(AsSb)-based OPSDL.

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“…III-V semiconductors with small amount of nitrogen (socalled dilute nitrides) such as GaNAs, GaInNAs, GaN-AsSb, or InNAs are under great interest of scientists since last decade due to their unusual physical properties [1][2][3] and potential applications in near [1,[4][5][6][7][8][9][10] and midinfrared [11][12][13][14][15] emitters, solar cells [16][17][18][19][20], and saturable absorber mirrors [21][22][23][24][25]. The most interesting feature of dilute nitrides is that the incorporation of small amount of nitrogen into III-V host causes a significant narrowing of the energy gap with the simultaneous reduction in the lattice constant [1].…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

et al. 2014

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In this work, we show the results of low-temperature photoluminescence (PL), time-resolved photoluminescence, and photoreflectance (PR) investigations, performed on a series of three Ga 0.64 In 0.34 As 1-x N x /GaAs single quantum wells (SQW) grown by metalorganic vapor phase epitaxy with the nitrogen content of 0, 0.5, and 0.8 %. Comparing the PL and PR data, we show that at low excitation intensity and temperature, the radiative recombination occurs via localizing centers (LCs) in all samples. The excitation intensity-dependent PL measurements combined with theoretical modeling of hopping excitons in this system allow us to provide quantitative information on the disorder parameters describing population of LCs. It has been found that the average energy of LCs increases about two times and simultaneously the number of LCs increases about 10 and 20 times after the incorporation of 0.5 and 0.8 % of nitrogen, respectively. The value of average localization energy e 0 determined for N-containing samples (*6-7 meV) is in the range typical for dilute nitride QWs grown by molecular beam epitaxy (MBE). On the other hand, the ''effective'' concentration of LCs seems to be higher than for GaInNAs/GaAs QW grown by MBE. The dramatic increase in localizing centers also affects the PL dynamics. Observed PL decay time dispersion is much stronger in GaInNAs SQW than in nitrogen-free SQW. The change in PL dynamic is very well reproduced by model of hopping excitons.

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GaInNAs(Sb) surface normal devices

Cited by 10 publications

References 46 publications

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

High‐brightness long‐wavelength semiconductor disk lasers

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

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