Gallium antisite defect and residual acceptors in undoped GaSb

Hu, Wei; Wang, Z.; Su, Bao‐Wang; Dai, Yiqun; Wang, S.J.; Zhao, Yuchao

doi:10.1016/j.physleta.2004.09.056

Cited by 30 publications

(22 citation statements)

References 21 publications

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“…Extensive work has been performed to investigate the nature of the unintentional p-type doping, and a native defect associated with excess Ga or a deficiency of Sb in GaSb has been linked to this characteristic. 30,31 The complex has been identified as a V Ga Ga Sb center where a Ga atom occupies an Sb site due to an Sb vacancy and leaves a Ga vacancy behind. Carbon incorporation due to the relatively low growth temperatures employed may also contribute to the p-type conductivity.…”

Section: Electrical Measurementsmentioning

confidence: 99%

“…The fitted peaks can all be attributed to transitions associated with the native defect (V Ga Ga Sb center) in GaSb, which acts as a residual acceptor. 30,31 The residual acceptor is linked to various peaks including the A peak (777 meV), acceptor B peak (758 meV), and the bound exciton (BE) peaks (796 meV to 805 meV). The resolved peaks shown in Fig.…”

Section: Pl Measurementsmentioning

confidence: 99%

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Growth and Characterization of Unintentionally Doped GaSb Nanowires

Burke

Weng

Kuo

et al. 2010

Journal of Elec Materi

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GaSb nanowires were synthesized on c-plane sapphire substrates by gold-mediated vapor-liquid-solid (VLS) growth using a metalorganic chemical vapor deposition process. A narrow process window for GaSb nanowire growth was identified. Chemical analysis revealed variations in the catalyst composition which were explained in terms of the Au-Ga-Sb ternary phase diagram and suggest that the VLS growth mechanism was responsible for the nanowire growth. The nominally undoped GaSb nanowires were determined to be p-type with resistivity on the order of 0.23 X cm. The photoluminescence was found to be highly dependent on the V/III ratio, with an optimal ratio of unity.

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Section: Electrical Measurementsmentioning

confidence: 99%

Section: Pl Measurementsmentioning

confidence: 99%

Growth and Characterization of Unintentionally Doped GaSb Nanowires

Burke

Weng

Kuo

et al. 2010

Journal of Elec Materi

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“…This antisite defect was suggested to be responsible for p-type conductivity in GaSb. Similarly Hu et al 19 For the positron lifetime measurements, the standard sandwich setup was used, where a 22 Na e þ -source is sandwiched between two identical samples. The sample package was placed in a closed cycle helium cryostat equipped with resistive heating elements and a sapphire thermal interface.…”

Section: Introductionmentioning

confidence: 99%

“…Also here the two-component trapping model is insufficient below 350 K. The increase of s 2 (and decrease of I 2 ) at temperatures above 500 K may be due to emergence of trapping at vacancy clusters, but further experiments that are out of the scope in this work would be necessary to analyze this in detail. Earlier studies [18][19][20] have reported a 280 ps defect component that has been associated with the gallium monovacancy V Ga . Our values for s 2 are in good agreement with this assignment, and hence, we conclude that V Ga is the dominant vacancy defect trapping positrons in GaSb.…”

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confidence: 99%

Native point defects in GaSb

Kujala

Segercrantz

Tuomisto

et al. 2014

Journal of Applied Physics

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Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures J. Appl. Phys. 102, 023511 (2007) We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p-and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals. V C 2014 AIP Publishing LLC. [http://dx

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“…15 Such a defect is a double acceptor, whose first and second ionization energies have been estimated in the range 10-30 meV and around 100 meV, respectively. 16,17 In bulk single crystals, the background native acceptors are present in density of a few 10 17 cm À3 , whereas in epitaxial layers, the defect density can be reduced of at least an order of magnitude.…”

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confidence: 99%