Gallium phosphide on insulator photonics enabled by micro-transfer printing

Abstract

Gallium phosphide-on-insulator (GaP-OI) has recently emerged as a promising platform for integrated nonlinear photonics due to its intrinsic material properties. Here we demonstrate the transfer of GaP layers to an oxidized silicon wafer using micro-transfer printing as a new approach for versatile future (hetero)-integrations.

Continuous-Wave Second-Harmonic Generation in Orientation-Patterned Gallium Phosphide Waveguides at Telecom Wavelengths

“…This improvement can be obtained by increasing the confinement or optimizing the waveguide fabrication process. More importantly, these suspended OP-GaP waveguides can be readily transferred onto Si photonic integrated circuits using pick-and-place technologies such as micro-transfer printing . They thus constitute a new bridge over the gap between mature and cost-effective visible detectors and near-infrared PICs and optical processing needs at telecom wavelengths and above, including spontaneous parametric down conversion (SPDC) for emission of entangled photon pairs based on efficient quasi-phase matched designs.…”

Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

“…This improvement can be obtained by increasing the confinement or optimizing the waveguide fabrication process. More importantly, these suspended OP-GaP waveguides can be readily transferred onto Si photonic integrated circuits using pick-and-place technologies such as micro-transfer printing 26 .…”