1988
DOI: 10.1109/23.25456
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Gamma induced dose fluctuations in a charge injection device

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Cited by 17 publications
(7 citation statements)
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“…It has turned out to be a useful tool for studying the response of large device arrays to radiation. Other radiation effects applications have been found for arrays of gate oxides [79], [80], sensor arrays [81], [82] and Erasable Programmable Read Only Memories (EPROMs) [83]. Fig.…”
Section: ) Worst Case Eventsmentioning
confidence: 99%
“…It has turned out to be a useful tool for studying the response of large device arrays to radiation. Other radiation effects applications have been found for arrays of gate oxides [79], [80], sensor arrays [81], [82] and Erasable Programmable Read Only Memories (EPROMs) [83]. Fig.…”
Section: ) Worst Case Eventsmentioning
confidence: 99%
“…Knowing the three moment ratios, the specific dose of the electron component can be evaluated using equation (9). Inserting the calculated value of z, into equation (2) and setting z, = 0 gives the contribution of the electron component to u / p .…”
Section: Electron Contribution To Dose Fluctuationsmentioning
confidence: 99%
“…The formalism for describing the combination of random processes as it applies to radiation induced ionization effects in sensors has been developed by Burke et al in [5,6]. Presented here is the first application of the theory to displacement damage fluctuations.…”
Section: A Introductionmentioning
confidence: 98%