Gamma-rays irradiation: An effective method for improving light emission stability of porous silicon

Fu, J. S.; Mao, Jiandong; Wu, E.; Jia, Ya; Zhang, B. R.; Zhang, L. Z.; Qin, G. G.; Wui, G. S.; Zhang, Y. H.

doi:10.1063/1.110677

Cited by 39 publications

(15 citation statements)

References 17 publications

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“…Electron bombardment did not cause essential changes of the chemical composition of the samples. Particularly, no additional oxidation of PS was observed, contrary to the published data [8]. The reasons are the low temperature of the samples during the bombardment, the presence of a protective amorphous surface film and the significant thickness of the PS layers.…”

Section: Different Morphologies Of Porous Silicon and Related Electricontrasting

confidence: 87%

Electron Irradiation Influence on Porous Silicon Electrical Parameters

Zimin

Ryabkin

et al. 2000

phys. stat. sol. (a)

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Changes of dc conductivity for the porous silicon (PS) with different morphology and different pictures of the depleted areas after the irradiation with high-energy electrons (2 MeV, 2 Â 10 16 to 1 Â 10 17 cm ± ±2 ) are presented. PS layers of 5±60% porosity were formed by anodization of n-type Si (100), 4.5 W cm; n + -Si (111), 0.01 W cm; and p + -Si (111), 0.03 W cm substrates. It is shown that the dc conductivity change after the electron bombardment depends on the structural parameters of PS. Different physical models of the charge carrier transport in PS of various porosity were used for the explanation of the experimental results.Introduction Presently there is no knowledge of how high-energy electron bombardment influences the properties of porous silicon (PS). Modification of structural and photoluminescence properties of PS by low-energy (keV) electron bombardment is reported in [1±3]. PS bomberdment by high-energy (MeV) electrons may be important to study the physical characteristics of PS and to modify the properties of PS. The aim of this work is to study electrical conductivity changes in the porous material with different porosity (5±60%) and pore morphology after bombarding PS material with 2 MeV electrons up to doses in the range from 2 Â 10 16 to 1 Â 10 17 cm ± ±2 .

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Section: Different Morphologies Of Porous Silicon and Related Electricontrasting

confidence: 87%

Electron Irradiation Influence on Porous Silicon Electrical Parameters

Zimin

Ryabkin

et al. 2000

phys. stat. sol. (a)

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“…It has been reported that gamma-ray irradiation creates dangling bonds in PS. 10 Figure 2 shows the ESR signals from PS before positron irradiation ͑curve a͒ and after 45 min positron irradiation ͑curve b͒. The g value is 2.0053Ϯ0.0003, very close to that of the dangling bond in PS.…”

Section: ͓S0003-6951͑97͒04952-8͔mentioning

confidence: 85%

“…Fu et al reported a 70 nm blueshift in the PL from ␥-irradiated PS and discussed the oxide growth mechanism in detail. 10 For those positron or gamma-ray irradiated PS samples sealed in a high-vacuum chamber, neither oxide growth nor two-peak PL production was detected.…”

Section: ͓S0003-6951͑97͒04952-8͔mentioning

confidence: 95%

Positron irradiation: A technique for modifying the photoluminescent structures of porous silicon

Huang

1997

Applied Physics Letters

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It has been shown that a two-peak green photoluminescence (PL) of porous silicon (PS) can be obtained from a continuous blueshift of a red PL by positron irradiation. At room temperature, PS samples were irradiated in air by energetic positrons coming from the conventionally used isotope Na22 (∼20 μCi). With increasing positron irradiation time, an originally red PL shifted continuously to green, then a two-peak PL appeared with a weak high-energy emission band (529 nm) and a low-energy dominant band (562 nm). The intensity of this high-energy band was enhanced by prolonged positron irradiation. The electron-spin-resonance signal combined with infrared absorption showed that positron irradiation created dangling bonds and stimulated oxide growth in PS. An interpretation is given on the basis of quantum confinement and atomiclike nature for very small nano-Si crystallites.

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“…For instance, irradiation of porous silicon samples with γ -quanta (with the dose 4.3 × 10 6 –3 × 10 8 rad) resulted in the remarkable (up to five times) increase of the red luminescent band near 710 nm (~1.75 eV) and in its blue shift [10]. Irradiation with a larger dose (10 10 rad) led to I PL decrease (up to 40 times) [11].…”

Section: Introductionmentioning

confidence: 99%

Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO2 Structures

et al. 2016

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Using photo-luminescence, infrared spectroscopy, and electron spin resonance technique, the silicon dioxide films with embedded silicon nanocrystals (nc-Si/SiO2 structures) have been investigated after γ-irradiation with the dose 2 × 107 rad and subsequent annealing at 450 °C in hydrogen ambient. For the first time, it was shown that such a radiation-thermal treatment results in significant increase of the luminescence intensity, in a red shift of the photoluminescence spectra, and in disappearance of the electron-spin resonance signal related to silicon broken bonds. This effect has been explained by passivation of silicon broken bonds at the nc-Si–SiO2 interface with hydrogen and by generation of new luminescence centers, these centers being created at elevated temperatures due to transformation of radiation-induced defects.

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Gamma-rays irradiation: An effective method for improving light emission stability of porous silicon

Cited by 39 publications

References 17 publications

Electron Irradiation Influence on Porous Silicon Electrical Parameters

Electron Irradiation Influence on Porous Silicon Electrical Parameters

Positron irradiation: A technique for modifying the photoluminescent structures of porous silicon

Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO2 Structures

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