GaN-based bidirectional Super HFETs Using polarization junction concept on insulator substrate

Nakajima, Akira; Unni, Vineet; Menon, Kalyani; Dhyani, Mahesh H.; Narayanan, E.M. Sankara; Sumida, Yoshio; Kawai, H.

doi:10.1109/ispsd.2012.6229074

Cited by 20 publications

(18 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Polarization Superjunction (PSJ) is a unique technique to achieve charge balance not through impurity‐based doping control, but by engineering of positive and negative polarization charges inherent in the GaN material. PSJ technology is based on a GaN/AlGaN/GaN double heterostructure (grown along the (0001) crystal axis), where positive and negative polarization charges coexist at the AlGaN (

000 \bar{1}

)/GaN(0001) interface with two‐dimensional electron gas (2DEG) accumulation and GaN(

000 \bar{1}

)/AlGaN(0001) interface with two‐dimensional hole gas (2DHG) accumulation, respectively . The basic concept/structure has been illustrated in Fig.…”

Section: Polarization Superjunctionmentioning

confidence: 99%

“…The fundamental requirement of a semiconductor technology platform that enables the simultaneous development of a wide range of high voltage and low voltage devices in GaN as required for integration is served by the PSJ platform . Unlike GaN‐on‐Si, GaN‐on‐sapphire does not suffer from crosstalk issues, due to the excellent insulating properties of sapphire.…”

Section: Polarization Superjunctionmentioning

confidence: 99%

See 1 more Smart Citation

Low cost high voltage GaN polarization superjunction field effect transistors

Kawai

Yagi

Hirata

et al. 2017

Phys. Status Solidi A

View full text Add to dashboard Cite

A comprehensive overview of novel high voltage GaN field effect transistors (FETs) based on the Polarization Superjunction (PSJ) concept and a cost-effective approach towards manufacturing these high performance devices are presented. Current challenges impeding wider adoption of GaN power switching transistors in applications, and latest results of scaled-up PSJ-FETs from POWDEC KK, have also been discussed. The article also presents hard-switching characteristics of 400V-to-800V boost converter constructed using a PSJ-FET grown on sapphire substrate and the future direction of GaN power semiconductor technology based on monolithic integration for advanced power electronics.

show abstract

000 \bar{1}

)/GaN(0001) interface with two‐dimensional electron gas (2DEG) accumulation and GaN(

000 \bar{1}

)/AlGaN(0001) interface with two‐dimensional hole gas (2DHG) accumulation, respectively . The basic concept/structure has been illustrated in Fig.…”

Section: Polarization Superjunctionmentioning

confidence: 99%

Section: Polarization Superjunctionmentioning

confidence: 99%

Low cost high voltage GaN polarization superjunction field effect transistors

Kawai

Yagi

Hirata

et al. 2017

Phys. Status Solidi A

View full text Add to dashboard Cite

show abstract

“…In addition, the conventional REduced SURface Field (RESURF) concept commonly employed in silicon technology has been demonstrated in GaN HEMT [14]. Moreover, the polarization junction (PJ) consisting of the two-dimensional hole gas (2DHG) above the 2DEG is proposed to improve the relationship between specific on-resistance (R ON,SP ) and BV [15][16][17][18]. GaN-based devices based on the PJ concept have been demonstrated on Sapphire and SiC substrate, while the high cost and small diameters of the GaN on SiC substrates go against the mass commercial application.…”

Section: Introductionmentioning

confidence: 99%

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

et al. 2020

View full text Add to dashboard Cite

An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaNtop/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (V ON). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low V ON is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (L AC) of 11 μm. The fabricated SBDs achieve a low V ON of 0.68 V with good uniformity, a high on/off current ratio ∼ 10 10 at room temperature, a low specific on-resistance (R ON,SP) of 1.17 mΩ cm 2 , and a high Baliga's figure-of-merit (FOM) of 1051 MW/cm 2 .

show abstract

“…1b. With on-state characteristics as in conventional AlGaN/GaN HFETs utilising the 2DEG for conduction, PSJ technology employs an inherent charge balance in the heterostructure to enhance the blocking voltage capability for a given drift length [5][6][7][8]. As also demonstrated in the circuit models of PSJ HFET, its base terminal can be connected to a source terminal internally to form a three-terminal device and operates in the same way as conventional HFET.…”

Section: Introductionmentioning

confidence: 99%

Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

Unni

Long

Yan

et al. 2018

IET Power Electronics

Self Cite

View full text Add to dashboard Cite

The magnitude of saturation current in a power device significantly impacts its short circuit capability. In conjunction with the unprecedented miniaturisation that GaN offers, there is a compelling rationale to examine this critical parameter in GaN transistors for thermally stable and reliable power converter applications. This article presents a comprehensive analysis of the physical behaviour that yields intrinsically low drain current saturation in GaN Polarisation Super Junction (PSJ) HFETs. The analysis in this work has been performed using electrical characterisation data of conventional and PSJ HFETs, supported by physics-based two-dimensional device simulations. Insight is gained on the differing device architecture-dependent mechanisms that determine the magnitude of drain current density in both types of devices when biased in the saturation region.

show abstract

GaN-based bidirectional Super HFETs Using polarization junction concept on insulator substrate

Cited by 20 publications

References 6 publications

Low cost high voltage GaN polarization superjunction field effect transistors

Low cost high voltage GaN polarization superjunction field effect transistors

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

Contact Info

Product

Resources

About