GaN based Super HFETs over 700V using the polarization junction concept

An E-Mode p-Channel GaN MOSHFET for a CMOS Compatible PMIC

“…1, a combination of the 2DHG, AlGaN barrier, and 2DEG acts as a p-n diode, where the AlGaN barrier of acts as a depletion region between the 2DEG and 2DHG. With negative voltage on the drain and gate, this diode remains reverse biased, and leakage current through the 2DEG in this condition has been experimentally shown to be through the AlGaN barrier [25]. This agrees with negligible values in the simulations.…”

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

“…The 2DEG is induced by the positive polarization charges along the AlGaN/GaN interface. The upper GaN/ AlGaN interface has negative polarization charges and hence generates 2DHG at the upper interface [15]. The gap between the drift region and the cathode (L 1 ) is used to cut down the hole current path as shown in Fig.…”

“…In addition, the conventional REduced SURface Field (RESURF) concept commonly employed in silicon technology has been demonstrated in GaN HEMT [14]. Moreover, the polarization junction (PJ) consisting of the two-dimensional hole gas (2DHG) above the 2DEG is proposed to improve the relationship between specific on-resistance (R ON,SP ) and BV [15][16][17][18]. GaN-based devices based on the PJ concept have been demonstrated on Sapphire and SiC substrate, while the high cost and small diameters of the GaN on SiC substrates go against the mass commercial application.…”

Low cost high voltage GaN polarization superjunction field effect transistors

“…Polarization Superjunction (PSJ) is a unique technique to achieve charge balance not through impurity‐based doping control, but by engineering of positive and negative polarization charges inherent in the GaN material. PSJ technology is based on a GaN/AlGaN/GaN double heterostructure (grown along the (0001) crystal axis), where positive and negative polarization charges coexist at the AlGaN ()/GaN(0001) interface with two‐dimensional electron gas (2DEG) accumulation and GaN()/AlGaN(0001) interface with two‐dimensional hole gas (2DHG) accumulation, respectively . The basic concept/structure has been illustrated in Fig.…”

“…The fundamental requirement of a semiconductor technology platform that enables the simultaneous development of a wide range of high voltage and low voltage devices in GaN as required for integration is served by the PSJ platform . Unlike GaN‐on‐Si, GaN‐on‐sapphire does not suffer from crosstalk issues, due to the excellent insulating properties of sapphire.…”