GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

Chen, Fu-Bang; Sheu, Jinn-Kong; Yen, W.M.; Wang, Yen-Chin; Huang, San Yuan; Liu, Chun-Nan; Yeh, Y. C. M.; Chang, Chih-Hsien; Lee, Ming-Lun

doi:10.1109/ted.2016.2518698

Cited by 2 publications

(2 citation statements)

References 11 publications

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“…It can be observed that the peak shifts correspond to the wavelength, which can also be defined as indium composition of MQW. In terms of 380 and 420 nm samples, they almost keep at the same value of peak shift, which means the QCSE is relatively low in samples with shorter wavelength [ 44 ], and the IQE of 380 and 420 nm are not affected by the QCSE within samples. However, the other two samples of 460 and 500 nm show obvious QCSE, and are inversely proportional to IQE.…”

Section: Resultsmentioning

confidence: 99%

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes

Chen

2017

Materials

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This paper reviews the formation of nanoscale V-shaped pits on GaN-based light emitting diodes (LEDs) grown by the metal organic chemical vapor deposition (MOCVD) system and studies the effect of V-shaped pits on quantum efficiency. Since V-pits could provide potential barriers around threading dislocations to lessen non-radiative recombinations in such a high defect environment. In our study, multiple InGaN/GaN quantum well samples with different emission wavelengths of 380, 420, 460, and 500 nm were grown, each with different nanoscale V-shaped pits of three diameters for 150, 200, and 250 nm, respectively. It was found that the multiple quantum well (MQW) sample with larger V-pits had a lower pit density, but a relatively larger total V-pits defected area. The optimum diameter of V-pits showing the highest quantum efficiency from the MQW sample depended on the emission wavelength. MQW samples with wavelengths of 380 and 500 nm exhibited the best internal quantum efficiency (IQE) performance at the smallest V-pits area; however, the best performance for MQW samples with wavelength around 420 and 460 nm occurred when large V-pit areas were presented. Photoluminescence (PL) peak shifts and Raman shifts can provide a relationship between quantum-confined Stark effect (QCSE) and IQE, as well as a comparison between strain and IQE. The results obtained in this phenomenological study shall provide a useful guide line in making high-performance GaN-based LEDs with wide emission spectra.

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Section: Resultsmentioning

confidence: 99%

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes

Chen

2017

Materials

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“…High responsivity, photon-recycling, wavelength selectivity, and high sensitivity are required for high efficiency photodiodes/sensors in Internet of Tings (IoT) applications. The quantum dots, , selective-area photon recycling, photonic crystals, the distributed Bragg reflector (DBR) had been reported for the photon recycling process on the GaN-based optoelectronic devices. Large lattice mismatch, and small refractive index differential were reported in AlN/GaN and AlGaN/GaN DBR structures. − Lattice-matched AlInN/GaN DBR structures , to GaN epitaxial layer were grown on sapphire substrates.…”

Section: Introductionmentioning

confidence: 99%

Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

Wang

Kao

et al. 2019

ACS Appl. Nano Mater.

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GaN-based ultraviolet photodiode with porous distributed Bragg reflectors (DBR) structure was demonstrated. The n +-AlGaN:Si epitaxial layers with high refractive index had been etched as porous-AlGaN layers with low refractive index through an electrochemical etched process. The peak wavelength of the responsivity spectra was measured at 355 nm, which was matched to the high reflectance wavelength region of the porous reflector. High photocurrent and large UV/visible rejection ratio were measured in the GaN photodiode with the porous-AlGaN reflector due to the light recycling process in the resonance cavity structure.

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GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

Cited by 2 publications

References 11 publications

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes

Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

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