GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality

Vaudo, R. P.; Xu, Xiaoqing; Loria, C.; Salant, A.D.; Flynn, J. S.; Brandes, George R.

doi:10.1002/1521-396x(200212)194:2<494::aid-pssa494>3.0.co;2-#

Cited by 48 publications

(29 citation statements)

References 11 publications

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“…The nominal indium mole fraction in the InGaN MQWs was B0. 10. The microstrutural properties of the LEDs were characterized using atomic force microscopy (AFM) and transmission electron microscopy (TEM).…”

Section: Methodsmentioning

confidence: 90%

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Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405nm

Cao

Yan²,

D'Evelyn

et al. 2004

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 90%

“…Large (up to 2 00 ) free-standing crack-free GaN substrates are now commercially available [10,11]. Yasan et al [3] demonstrated 340 nm AlGaN LEDs on a HVPE grown GaN substrate, and the device produced an output power one order of magnitude higher than similar LEDs grown on sapphire.…”

Section: Introductionmentioning

confidence: 87%

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405nm

Cao

Yan²,

D'Evelyn

et al. 2004

Journal of Crystal Growth

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“…The TD density could be decreased to around 10 4 -10 6 cm -2 with increasing of GaN thickness [88]. In this vapor-phase growth technique, gallium chloride (GaCl) will be first synthesized by the reaction between metallic gallium and hydrogen chloride (HCl).…”

Section: The Aspect Of Gan Epitaxy Substrate Selectionmentioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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“…2(a)] using such a buffer approach [49], [50]. Two-inch boule growth ranging from 2.5 and 3.5 mm up to 10 mm has been reported also by ATMI Inc, [51], Ferdinand-Braun-Institute [52], and Kyma Technologies, Inc. [ Fig. 2(b)] [53], [54], respectively.…”

Section: B Boule Growth Developmentmentioning

confidence: 99%

GaN Substrates for III-Nitride Devices

2010

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| Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality

Cited by 48 publications

References 11 publications

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405nm

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405nm

CVD solutions for new directions in SiC and GaN epitaxy

GaN Substrates for III-Nitride Devices

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