GaN enhancement/depletion-mode FET logic for mixed signal applications

Micovic, M.; Tsen, T.; Hu, Ming; Hashimoto, P.; Willadsen, P. J.; Milosavljevic, I.; Schmitz, A.; Antcliffe, M.; Zhender, D.; Moon, J.S.; Wong, Wei-Ting; Chow, D. H.

doi:10.1049/el:20052263

Cited by 67 publications

(20 citation statements)

References 3 publications

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“…In case of gate recess etching several improvements can be applied to enhance or stabilize the attained properties. Promising solutions are an AlGaN barrier layer with lower aluminum content or a double heterostructure device [6]. Both changes are able to shift V th to positive values resulting in thicker AlGaN barrier after recess etching, hence lower gate leakage will be attained.…”

Section: Resultsmentioning

confidence: 99%

Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation

Maroldt¹,

Haupt²,

Pletschen³

et al. 2008

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials

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Section: Resultsmentioning

confidence: 99%

Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation

Maroldt¹,

Haupt²,

Pletschen³

et al. 2008

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials

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“…The unique properties of GaN material, such as large bandgap, high breakdown electric field, and high saturation velocity, have enabled AlGaN/GaN high electron mobility transistors (HEMTs) to get extensively developed and fielded in microwave power applications . The capability of working in harsh environments, especially the outstanding power‐handling capability of GaN HEMT, also makes it very attractive for digital as well as mixed‐signal applications, where it can be operated directly from high‐voltage rails. One challenge toward this application is developing high‐yield technology to enable fabrication of moderate‐scale circuits.…”

Section: Introductionmentioning

confidence: 99%

A 16 GS/s 3‐Bit DAC Core in GaN HEMT Technology

Kong¹,

Zhang

Zhou³

et al. 2018

Physica Status Solidi (a)

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A robust 0.1‐µm GaN high electron mobility transistor (HEMT) technology is developed for high‐speed mixed‐signal circuits of considerable complexity. The baseline 0.1‐µm depletion‐mode HEMT exhibits a peak cut‐off frequency of 100 GHz and a peak maximum oscillation frequency of 165 GHz. A 501‐stage monolithically integrated enhancement/depletion‐mode ring oscillator incorporating 1006 GaN HEMTs is demonstrated with a low propagation delay of 7.3 ps/stage, verifying the uniformity and high performance of the devices. For the first time, a 16 GS/s 3‐bit digital‐to‐analog converter (DAC) core using GaN technology is implemented. A static output voltage swing as large as 1.5 V is achieved, validating the advantage of GaN technology for use in large‐dynamic‐range circuits.

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“…The outstanding GaN material properties like wide band gap, high electron mobility, high breakdown field, high saturation drift velocity and high sheet‐carrier concentration at the hetero‐junction interfaces, combined with the high electron mobility of the AlGaN/GaN and related heterostructures, makes these devices applicable for both a fabrication of digital ICs to perform reliable operations at high temperature , and for digital control applications, power switching, DC‐DC converters and other specific and professional applications .…”

Section: Introductionmentioning

confidence: 99%

AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates

Jatal

Hörselmann

Jacobs

et al. 2017

Phys. Status Solidi A

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GaN capped Al 0.2 Ga 0.8 N/AlN/GaN heterostructures were grown on 3C-SiC (111)/Si (111) substrates and used for the implementation of digital circuits. The AlGaN/GaN heterostructure was grown by MOCVD, whereas the 3C-SiC(111)/ Si(111) pseudosubstrate was fabricated using low temperature LPCVD. The SiC layer was 50 nm thick. The presented digital circuits were realised using depletion-mode load and drive high electron mobility transistors. In order to demonstrate the feasibility of digital circuits using standard depletion mode device technology, NAND and NOR digital circuits were designed and fabricated using a standard Au/Ti/ Al/Ti and Au/Ni metallisation scheme for the ohmic and Schottky contacts of the high electron mobility transistors, respectively. The logic function and the voltage transfer characteristics of the fabricated logic circuits are demonstrated and analysed.

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GaN enhancement/depletion-mode FET logic for mixed signal applications

Cited by 67 publications

References 3 publications

Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation

Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation

A 16 GS/s 3‐Bit DAC Core in GaN HEMT Technology

AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates

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