GaN laser driver switching 30 A in the sub-nanosecond range

Liero, A.; Klehr, A.; Hoffmann, Th.; Prziwarka, Thomas; Heinrich, W.

doi:10.1109/eumic.2016.7777591

Cited by 4 publications

(5 citation statements)

References 9 publications

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“…The same solution is used in [85], where a GaN FET can deliver up to 30 A, 0.5-25 ns wide pulses at a PRF of up to 5 MHz, or 60 A, 50-500 ns wide single pulse as per [86]. Modelocked lasers [87] can reach 100 MHz PRF, even at 20 A, but pulses are short (<2 ns) and the PRF is fixed: this solution is not suitable for APWP sequences.…”

Section: Driver Topologies Analysismentioning

confidence: 99%

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Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Svilainis

Chaziachmetovas

Eidukynas

et al. 2021

IEEE Trans. Instrum. Meas.

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Laser ultrasound offers several benefits in comparison to immersion or air coupled ultrasound: it directly generates stress on the sample surface; it has a wide bandwidth and a small acoustic source can be produced. Conventionally, high power pulsed lasers are required therefore equipment is bulky and expensive. Here we propose to use mid-power laser diodes, which are small and low cost. To solve the low signal amplitude problem with lower power lasers, the use of spread spectrum signal, arbitrary position and width binary pulse sets is proposed. To date, a laser driver for this task has not been available. This paper describes the development of such a compact driver, where the essential electronics occupy an area of 10x20 mm. The whole system with a fixture for kinematic mount is comparable in size to a conventional piezoelectric ultrasonic transducer. The driver can supply pulse sets of up to 40 A. Individual pulse duration can vary between 20 ns to 1000 ns (0.5-25 MHz ultrasound range) and the total pulse train duration is limited by the laser type used. Experiments show that up to 10 s long pulse sets can be used at 10 A current, without laser degradation. Current waveforms, beam profile and optical response signals were measured for three rectified topologies. It was concluded, that the GaN based constant current switch topology has the best performance, but a power MOSFET in a source current feedback topology can also be used to generate pulses down to 20 ns. Photoacoustic response signals from chirp and phase shift keying modulation have been demonstrated.

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Section: Driver Topologies Analysismentioning

confidence: 99%

“…Modelocked lasers [87] can reach 100 MHz PRF, even at 20 A, but pulses are short (<2 ns) and the PRF is fixed: this solution is not suitable for APWP sequences. The laser driver presented in [85] uses GaN transistors, and can deliver 400 A, but only for a 50 ns wide single pulse.…”

Section: Driver Topologies Analysismentioning

confidence: 99%

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Svilainis

Chaziachmetovas

Eidukynas

et al. 2021

IEEE Trans. Instrum. Meas.

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“…Fairly powerful is the competition from 20A/2ns [27] and from the especially impressive sub-nanosecond 25-30A [28] GaN FET-based drivers. They definitely surpass Si avalanche drivers in having a higher repetition rate, but should lose out in the simplicity of assembly (including the realization of low inductance), miniaturization, the expected price of a transmitter, and the compactness of the electronics driving the transmitter (a Si ABJT can be triggered by a pulse of only ~20 mA, while the requirements for controlling a GaN driver are very strict).…”

Section: Suppression Of Relaxation Oscillations: Importance and Specimentioning

confidence: 99%

Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Vainshtein

Zemlyakov

Егоркин

et al. 2019

IEEE Trans. Power Electron.

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The-state-of-the-art in long-distance near-infrared optical radars is the use of laser-diodebased miniature pulsed transmitters producing optical pulses of 3-10 ns in duration and peak power typically below 40W. The duration of the transmitted optical pulses becomes a bottleneck in the task of improving the radar ranging precision, particularly due to the progress made in developing single photon avalanche detectors (SPADs). The speed of miniature highcurrent drivers is limited by the speed of the semiconductor switch, either a gallium nitride (GaN) field-effect transistor, the most popular alternative nowadays, or a silicon avalanche bipolar junction transistor (ABJT), which was traditional in the past. Recent progress in the physical understanding of peculiar 3-D transients promises further enhancement in speed and efficiency of properly modified ABJTs, but that is not the only factor limiting the transmitter speed. We show here that a low-inductance miniature transmitter assembly containing only a specially developed capacitor, a more advanced transistor chip than that used in commercial ABJTs and a laser diode has allowed peak power from 40 to 180 W to be reached in optical pulses of 1-2 ns in duration without afterpulsing relaxation oscillations. This finding is of interest for compact low-cost, long-distance decimetreprecision lidars, particularly for automotive applications.

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“…Estos drivers generan picos de corriente de menor amplitud que los de anchura fija y las anchuras generadas son mayores. Sin embargo, con la aparición reciente de un nuevo tipo de transistor FET basado en nitruro de galio eGaN FET con mejores características que los FET de silicio se ha logrado mejorar estas corrientes y reducir las anchuras [70,71,72,73].…”

Section: Figura 212 (Arriba) Imagen De La Vascularización De Una Mama...unclassified

Beam Profile Improvement of a High-Power Diode Laser Stack for Optoacoustic Applications

et al. 2017

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GaN laser driver switching 30 A in the sub-nanosecond range

Cited by 4 publications

References 9 publications

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Beam Profile Improvement of a High-Power Diode Laser Stack for Optoacoustic Applications

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