2004
DOI: 10.1063/1.1690876
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GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

Abstract: GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 µm and a root mean square roughness of ~1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is sign… Show more

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Cited by 122 publications
(67 citation statements)
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“…Positive microlens arrays in GaN and GaN-based devices have been reported recently in detail by Oder et al 4 and Choi et al 5 respectively, where the importance of being able to form micro-optical elements 6 from this technologically significant material was highlighted. Here we show that negative and bifocal lenses can also be fabricated from epitaxial GaN.…”
Section: Methodsmentioning
confidence: 94%
“…Positive microlens arrays in GaN and GaN-based devices have been reported recently in detail by Oder et al 4 and Choi et al 5 respectively, where the importance of being able to form micro-optical elements 6 from this technologically significant material was highlighted. Here we show that negative and bifocal lenses can also be fabricated from epitaxial GaN.…”
Section: Methodsmentioning
confidence: 94%
“…The light extraction efficiency is a key factor of the external quantum efficiency of LEDs. There have been several reports to improve the light extraction efficiency, for example, a cone-shaped surface texture via laser lift-off [3], a microlens array and photonic crystal structure which are subjected sophisticated process techniques [4,5]. Above those, however, make device fabrication further complicated.…”
Section: Introductionmentioning
confidence: 99%
“…The superior mechanical characteristics, such as high hardness and high-temperature stability, enable the sapphire to be used as a substrate for LED devices because it can endure the severe temperature conditions of GaN film deposition [1][2][3]. Furthermore, it is widely used in other fields, such as laser diodes and laser sources for storage and optical media [4][5][6][7][8][9], due to its combination of high chemical resistance and mechanical characteristics as well as its transparency [10][11][12].…”
Section: Introductionmentioning
confidence: 99%