GaN power electronics for automotive application

Boutros, K. S.; Chu, Rongming; Hughes, B.

doi:10.1109/energytech.2012.6304646

Cited by 47 publications

(36 citation statements)

References 4 publications

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“…With a smaller C GD and a higher saturation velocity (v sat ), WBG devices can switch at faster speeds [5]. This decreases the time it takes for the switch to transition between on and off states and reduces the associated switching loss.…”

Section: Overview Of Wbg Devicesmentioning

confidence: 99%

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Design considerations for wide bandgap based motor drive systems

Scott

Yao

et al. 2014

2014 IEEE International Electric Vehicle Conference (IEVC)

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The backbone of traction drive systems for electrified vehicles is based on the insulated gate bipolar junction transistors (IGBT) created from silicon (Si). Over the last several years, switching devices made from silicon carbide (SiC) and gallium nitride (GaN) have become available. This has resulted in the construction of power electronic systems with greater power densities and better efficiency over similarly rated Si based versions. Yet some hurdles still remain prior to wide spread adoption of these components in automotive power electronics. The following paper reviews the current state-of-art for SiC and GaN based power devices. Challenges in their implementation and barriers to commercialization are presented. This information is supplemented with test results from a thermal investigation. The impact of high speed wide bandgap power devices on the reflected wave phenomenon is also explored.

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Section: Overview Of Wbg Devicesmentioning

confidence: 99%

“…They included recessed gate [12], ion implantation [5], gate injection transistor [11], a MOSFET structure [19], and the cascode configuration [10].…”

Section: ) Normally Off Operationmentioning

confidence: 99%

Design considerations for wide bandgap based motor drive systems

Scott

Yao

et al. 2014

2014 IEEE International Electric Vehicle Conference (IEVC)

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“…High-frequency operations also enable the use of more compact sine or dv/dt filters [1]. In additon, thanks to their higher breakdown voltage [2], they are also more suitable for medium voltage operation. In the case of GaN devices, free wheeling diodes can be avoided since GaN switches are bi-directional [1], [2].…”

Section: Introductionmentioning

confidence: 99%

Dv/Dt Filtering Techniques for Electric Drives: Review and Challenges

Pastura

Nuzzo

Kohler

et al. 2019

IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society

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The use of wide band gap devices in power converters is becoming more and more popular since they enable operations at higher switching frequencies, voltages and temperatures compared to traditional power semiconductors, while also improving the efficiency. However, in electric drives, they also tend to increase voltage overshoots at motor terminals and to produce uneven voltage distributions across stator windings, due to their high rate of voltage change over time (dv/dt). In order to mitigate these issues, passive filters can be employed. The aim of this paper is to give an overview of possible solutions based on passive filters, analyzing the main advantages and drawbacks. A comprehensive, qualitative comparative study is carried out taking into account common mode currents reduction, power losses, costs, dimensions and reliability.

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“…They offer high energy conversion efficiencies, high output optical and electrical powers, ruggedness, and superior transient performance. Recently, III-N-based devices have been adopted in automotive applications to reduce electric energy consumption and carbon emissions, which will alleviate the global warming problem [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Lundh

Shervin

et al. 2019

Journal of Electronic Packaging

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GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

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GaN power electronics for automotive application

Cited by 47 publications

References 4 publications

Design considerations for wide bandgap based motor drive systems

Design considerations for wide bandgap based motor drive systems

Dv/Dt Filtering Techniques for Electric Drives: Review and Challenges

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

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