GaN Schottky Diodes for Microwave Power Rectification

Takahashi, Kazuhiro; Ao, Jin‐Ping; Ikawa, Yusuke; Hu, Cheng-Yu; Kawai, H.; Shinohara, Naoki; Niwa, Naoki; Ohno, Yasuo

doi:10.1143/jjap.48.04c095

Cited by 34 publications

(6 citation statements)

References 5 publications

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“…[2] Gallium nitride (GaN) is an attractive material for SBDs due to its high-breakdown voltage, high-frequency operation and high-temperature performance. [3] Recently, different anode materials such as Ni, W and Mo are applied in GaN SBDs. In our previous study, GaN SBDs with reactively sputtered TiN anode present a lower turn-on voltage compared with Ni anode, meanwhile the on-resistance, reverse leakage currents and reverse breakdown characteristics are comparable.…”

mentioning

confidence: 99%

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*

Wang

et al. 2019

Chinese Phys. Lett.

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The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated. With increasing the temperature from 25 to 175°C, reduction of the turn-on voltage and increase of the leakage current are observed for both GaN SBDs with TiN and Ni anodes. The performance after thermal treatment shows much better stability for SBDs with TiN anode, while those with Ni anode change due to more interface states. It is found that the leakage currents of the GaN SBDs with TiN anode are in accord with the thermionic emission model whereas those of the GaN SBDs with Ni anode are much higher than the model. The Silvaco TCAD simulation results show that phonon-assisted tunneling caused by interface states may lead to the instability of electrical properties after thermal treatment, which dominates the leakage currents for GaN SBDs with Ni anode. Compared with GaN SBDs with Ni anode, GaN SBDs with TiN anode are beneficial to the application in microwave power rectification fields due to lower turn-on voltage and better thermal stability.

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confidence: 99%

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*

Wang

et al. 2019

Chinese Phys. Lett.

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“…Optimizing the RF-to-DC PCE is the primary objective, followed by the secondary goal of maximizing the impedance mismatch for dedicated high-power incidence reflection. The power rectification efficiency at low input power and high-power handling capability of a diode can be improved through crucial considerations, including low built-involtage (V bi ) and high breakdown voltage (V br ) [20,21]. Typically, there exists a contradiction between V bi and V br due to a primary theoretical challenge, namely that a lower V bi implies a low Schottky barrier height, which leads to a declined V br .…”

Section: Low-power Diode-based Rectifier Designmentioning

confidence: 99%

Dual-Module Ultrawide Dynamic-Range High-Power Rectifier for WPT Systems

Yu,

Zhang,

Liu

et al. 2024

Energies

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Rectifier plays a pivotal role in wireless power transfer systems. While numerous studies have concentrated on enhancing efficiency and bandwidth at specific high-power levels, practical scenarios often involve unpredictable power inputs. Consequently, a distinct need arises for a rectifier that demonstrates superior efficiency across a broad range of input power levels. This paper introduces a high-power RF-to-DC rectifier designed for WPT applications, featuring an ultrawide dynamic range of input power. The rectification process leverages a GaN (gallium nitride) high electron mobility transistor (HEMT) to efficiently handle high power levels up to 12.6 W. The matching circuit was designed to ensure that the rectifier will operate in class-F mode. A Schottky diode is incorporated into the design for relatively lower-power rectification. Seamless switching between the rectification modes of the two circuits is accomplished through the integration of a circulator. The proposed rectifier exhibits a 27.5 dB dynamic range, achieving an efficiency exceeding 55% at 2.4 GHz. Substantial improvement in power handling and dynamic range over traditional rectifiers is demonstrated.

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“…To date, GaAs or GaN Schottky barrier diodes have been predominantly applied for high-frequency high-power rectennas. [3][4][5][6][7][8][9][10][11] However, radio frequency (RF)-direct current (DC) power conversion efficiency and power are still not sufficient. Utilization of GaN-based high-electron mobility transistor (HEMT) structure is very attractive due to its high carrier mobility and its large critical electric field.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications

Takahashi

Ando

Tsuchiya

et al. 2023

Physica Status Solidi (a)

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AlGaN/GaN high‐electron‐mobility transistor (HEMT)‐based gated‐anode diodes (GADs) for a 5.8 GHz rectenna application are proposed. An anode of the GAD is formed by connecting a gate and a drain of a normally off GaN HEMT. Herein, a wide recessed HEMT structure reported in the previous article is modified to a buried‐type recessed gate HEMT structure. The gate‐to‐cathode distance is optimized to maximize device performance. Typical direct current (DC) characteristics of the HEMTs are a threshold voltage (Vth) of +0.4 V and a maximum drain current (Imax) of 450 mA mm−1. GADs using the HEMTs show the characteristics of maximum forward current (If) of 600 mA mm−1 and reverse breakdown voltage (BVr) of more than 100 V. The GAD using the recessed gate structure HEMT is shown to significantly improve If and BVr simultaneously compared to the previous work using the wide recessed gate structure. The rectifying performance of a bridge‐type rectifier simulated with SPICE model of the GAD shows radio frequency (RF)–DC conversion efficiency of 84% and RF input power of 13 W at 5.8 GHz using four GADs with each gate width (Wg) of 400 μm.

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GaN Schottky Diodes for Microwave Power Rectification

Cited by 34 publications

References 5 publications

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*

Dual-Module Ultrawide Dynamic-Range High-Power Rectifier for WPT Systems

Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications

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GaN Schottky Diodes for Microwave Power Rectification

Cited by 34 publications

References 5 publications

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes*

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes*

Dual-Module Ultrawide Dynamic-Range High-Power Rectifier for WPT Systems

Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications

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Product

Resources

About

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*

Temperature-Dependent Characteristics of GaN Schottky Barrier Diodes with TiN and Ni Anodes^*