Gas-barrier enhancement of polymer sheet by plasma-based ion implantation

Sakudo, N.; Endo, H.; Yoneda, Ryo; Ohmura, Y.; Ikenaga, Noriaki

doi:10.1016/j.surfcoat.2004.08.155

Cited by 19 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Plasma-based ion implantation and plasma-source ion implantation, which are realized by using high energy ions by applying high bias voltage of approximately 10 kV, are out of our purpose, although they can be applied to processing of polymer materials. [9][10][11] The pulse-biased ICP CVD method used in our work has another feature. We have used bipolar pulse bias, where we can expect effects of negatively charged particles during positive pulse bias.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Gas Barrier Properties of Hydrogenated Amorphous Carbon Thin Films Deposited with a Pulse-Biased Inductively Coupled Plasma Chemical Vapor Deposition Method

Baek

Shirafuji

Cho

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Hydrogenated amorphous carbon (a-C:H) films have been deposited on poly(ethylene terephthalate) (PET) films with an pulse-biased inductively coupled plasma chemical vapor deposition method using CH 4 and C 2 H 2 gases. We have investigated the effects of the pulse-bias frequency on the oxygen transmission rate (OTR) of the a-C:H-coated PET sample, and discussed relationship between the OTR characteristics and the structure of the films based on the results of Raman and infrared absorption spectroscopy. In case of CH 4 plasmas, the OTR of the sample has been reduced down to 1.12 cm 3 /(m 2 ÁdayÁatm) by increasing the bias-frequency to 2 kHz, and the structure of the a-C:H films has been modified from polymer-like to tetrahedral one. In case of C 2 H 2 plasmas, the OTR of the samples has been 1.18 cm 3 /(m 2 ÁdayÁatm) with the lower bias frequency of 0.5 kHz, and has not shown strong dependence on the pulse-bias frequency. This has been explained by the fact that the films prepared with C 2 H 2 plasma can be modified to tetrahedral structures by applying the bias with the lower frequency. #

show abstract

Section: Introductionmentioning

confidence: 99%

Oxygen Gas Barrier Properties of Hydrogenated Amorphous Carbon Thin Films Deposited with a Pulse-Biased Inductively Coupled Plasma Chemical Vapor Deposition Method

Baek

Shirafuji

Cho

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…PIII is superior to conventional beam-line ion implantation when dealing with specimens of irregular shape [1,2]. For instance, it has been successfully applied for the inner surface modification of polyethylene terephthalate (PET) bottles, and the gas-barrier property of the PET was improved greatly [3][4][5]. However, PIII of the interior of cylindrical tubes, especially ones that are electrically insulating materials, is technically difficult.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of plasma immersion ion implantation on the inner surface of a cylindrical dielectric target

Wang

2013

Surface and Coatings Technology

View full text Add to dashboard Cite

Polymer Surface Modification by Charged Particles from Plasma Using Plasma‐Based Ion Implantation Technique

Tanaka,

Kakugawa,

Vutova

2024

Polymer Surface Modification to Enhance Adhesion

View full text Add to dashboard Cite

Gas-barrier enhancement of polymer sheet by plasma-based ion implantation

Cited by 19 publications

References 4 publications

Oxygen Gas Barrier Properties of Hydrogenated Amorphous Carbon Thin Films Deposited with a Pulse-Biased Inductively Coupled Plasma Chemical Vapor Deposition Method

Oxygen Gas Barrier Properties of Hydrogenated Amorphous Carbon Thin Films Deposited with a Pulse-Biased Inductively Coupled Plasma Chemical Vapor Deposition Method

Numerical simulation of plasma immersion ion implantation on the inner surface of a cylindrical dielectric target

Polymer Surface Modification by Charged Particles from Plasma Using Plasma‐Based Ion Implantation Technique

Contact Info

Product

Resources

About