Gas-Phase Cleaning for Removal of Surface Contaminants

Kohli, Rajiv

doi:10.1016/b978-0-323-43157-6.00002-1

Cited by 3 publications

(3 citation statements)

References 176 publications

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“…The removal of surface contaminants remains critical to various processes such as thin-film growth, fabrication of medical implants, and decontamination of radioactive materials. 1) Different methods have been employed to address the issue of maintaining a clean, contaminant-free surface. These techniques can be generally classified as wet and dry cleaning.…”

Section: Introductionmentioning

confidence: 99%

“…Several dry methods have already been developed and commercialized, such as those using lasers, plasma, UV-ozone, solid-gas pellets, electrostatic charge, and high-velocity air jets. 1) Gas-phase cleaning is versatile, highly effective, environmentally benign, and relatively cheap. Much work has been devoted to developing gas-phase cleaning methods for various applications ranging from semiconductor processing 3) to disinfection and sterilization, 4) and to nuclear waste remediation.…”

Section: Introductionmentioning

confidence: 99%

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RF plasma cleaning of silicon substrates with high-density polyethylene contamination

Cagomoc

Leon

Ebuen

et al. 2017

Jpn. J. Appl. Phys.

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Upon contact with a polymeric material, microparticles from the polymer may adhere to a silicon (Si) substrate during device processing. The adhesion contaminates the surface and, in turn, leads to defects in the fabricated Si-based microelectronic devices. In this study, Si substrates with artificially induced high-density polyethylene (HDPE) contamination was exposed to 13.56 MHz radio frequency (RF) plasma utilizing argon and oxygen gas admixtures at a power density of 5.6 W/cm 2 and a working pressure of 110 Pa for up to 6 min of treatment. Optical microscopy studies revealed the removal of up to 74% of the polymer contamination upon plasma exposure. Surface free energy (SFE) increased owing to the removal of contaminants as well as the formation of polar groups on the Si surface after plasma treatment. Atomic force microscopy scans showed a decrease in surface roughness from 12.25 nm for contaminated samples to 0.77 nm after plasma cleaning. The smoothening effect can be attributed to the removal of HDPE particles from the surface. In addition, scanning electron microscope images showed that there was a decrease in the amount of HDPE contaminants adhering onto the surface after plasma exposure.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

Cagomoc

Leon

Ebuen

et al. 2017

Jpn. J. Appl. Phys.

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“…However, wet etching processes may not be applicable for fabrication of next-generation devices of 10 nm or less due to the issues such as pattern leaning and collapsing caused by unbalanced capillary forces during drying of rinse liquid. In addition, since the etch rate is fast, it is difficult to control the process, and the problems might occur such as surface chemical damage by the etchant during etch process [6][7][8] . Therefore, it is necessary to develop selective isotropic dry etching processes that may solve these problems.…”

mentioning

confidence: 99%

Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor

Gil

Kim

Jang

et al. 2023

Sci Rep

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In this study, an isotropic etching process of SiO2 selective to Si3N4 using NF3/H2/methanol chemistry was investigated. HF was formed using a NF3/H2 remote plasma, and in order to remove the F radicals, which induces spontaneous etching of Si-base material, methanol was injected outside the plasma discharge region. Through this process, etch products were formed on the surface of SiO2, and then the (NH4)2SiF6 was removed by following heating process. When the H and F radicals were abundant, the highest SiO2 etch per cycle (EPC) was obtained. And, the increase of H2 and methanol percentage in the gas chemistry increased the etch selectivity by decreasing the F radicals. The etch products such as (NH4)2SiF6 were formed on the surfaces of SiO2 and Si3N4 during the reaction step and no noticeable spontaneous etching by formation of SiF4 was observed. By optimized conditions, the etch selectivity of SiO2 over Si3N4 and poly Si higher than 50 and 20, respectively, was obtained while having SiO2 EPC of ~ 13 nm/cycle. It is believed that the cyclic process using NF3/H2 remote plasma and methanol followed by heating can be applied to the selective isotropic SiO2 etching of next generation 3D device fabrication.

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Air Quality Matters: A Holistic Strategy and Approach to HVAC System Validation in Pharmaceuticals

Aakash,

Anamika,

Sapna

et al. 2024

International Journal of Innovative Science and Research Techno

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Heating, ventilation, and air conditioning (HVAC) systems plays a critical role in pharmaceutical manufacturing facilities by ensuring the integrity of product quality, safety, and compliance with regulatory requirements. HVAC validation is an essential process that verifies and documents the performance and effectiveness of these systems. This review paper explores various strategies and approaches to HVAC validation in pharmaceutical manufacturing facilities, including regulatory considerations, validation methodologies, risk assessment, and ongoing monitoring. The paper also discusses the challenges associated with HVAC validation and presents best practices to improve the effectiveness of the validation process.

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Gas-Phase Cleaning for Removal of Surface Contaminants

Cited by 3 publications

References 176 publications

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

Selective isotropic etching of SiO2 over Si3N4 using NF3/H2 remote plasma and methanol vapor

Air Quality Matters: A Holistic Strategy and Approach to HVAC System Validation in Pharmaceuticals

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