2012
DOI: 10.1039/c2ce06452a
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Gas-phase synthesis and growth mechanism of SiC/SiO2core–shell nanowires

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Cited by 17 publications
(6 citation statements)
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“…In previous studies, the reaction between SiO and CO gases was attributed to the synthesis of SiC NWs or SiC/SiO 2 NWs. [24][25][26] However, in our experiment, no NWs were found to possess a core. To further confirm the lack of a SiC core, TEM-EDS was performed by scanning from the edge to the centre of an NW; however, only silicon and oxygen atoms were confirmed and no carbon was detected.…”
Section: Resultscontrasting
confidence: 67%
“…In previous studies, the reaction between SiO and CO gases was attributed to the synthesis of SiC NWs or SiC/SiO 2 NWs. [24][25][26] However, in our experiment, no NWs were found to possess a core. To further confirm the lack of a SiC core, TEM-EDS was performed by scanning from the edge to the centre of an NW; however, only silicon and oxygen atoms were confirmed and no carbon was detected.…”
Section: Resultscontrasting
confidence: 67%
“…17 More recently, Choi et al demonstrated a new synthetic route that uses gas-state precursors instead of powders for a gas-phase synthesis process of SiC@SiO 2 nanowires. 18 In the previous studies, vapor-solid (VS) mechanism 15,19 and vapor-liquid-solid (VLS) mechanism 14,16,17 of the growth of SiC nanowires have also been explained. Most of these reported synthesis methods, however, involved complicated equipment and processes, which limit their further application and further study in many fields.…”
Section: Introductionmentioning
confidence: 99%
“…[5][6][7][8][9] Nanowires of covalent materials have been designed and fabricated using the vapor-solid (VS), vapor-liquid-solid (VLS) and gas-phase synthesis processing. [10][11][12] To date, different processes have been used to produce SiC nanowires, including carbothermal reaction, chemical vapor deposition, catalystassisted heating process, laser ablation and arc-discharge method. [13][14][15][16][17] To obtain SiC nanowires, the starting materials should be suitable for the nucleation of SiC nanocrystals and keep further growth along a certain direction (i.e., along the [111] direction).…”
Section: Introductionmentioning
confidence: 99%