GaSb film growth by liquid phase epitaxy

Abstract

Doped GaSb (Gallium Antimonide) films on p‐GaSb substrates have been obtained by means of a low‐cost and fast‐growth method: the liquid phase epitaxy (LPE) technique. The growth temperature was 400 °C, and the growth time was varied between1 and 5 min. Characterization of the films was performed by means of high resolution X‐ray Diffraction, low temperature‐photoluminiscence and current‐voltage curve measurements. The X‐ray diffraction pattern confirms a zincblende‐type crystal structure with a high‐thin peak centred at 30.36°. The PL spectra at 27 K allowed to confirm the band‐gap energy to be 0.8 eV and the I‐V curves presented a PN junction behavior which corresponds to the obtained structured. Metal contacts of Au‐Zn and Au‐Ge were placed to perform electrical characterization (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The Surface and Optical Properties of Passivated GaSb with Different Passivating Agents

“…Featured with many special physical properties, GaSb has attracted much attention for optoelectronic applications [1,2]. In particular, envisioned as an important III-V semiconductor candidate for high-speed and optoelectronic device applications, plenty of attention has been given to GaSb for optoelectronic devices with low-threshold voltage, photodetectors with applications to optical fiber communication systems in the near-to middle-infrared wavelength range, high-frequency devices and high-efficiency thermo-photovoltaic.…”