Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor

Duong, Ngoc Thanh; Park, Chulho; Nguyen, Duc Manh; Nguyen, Phuong Huyen; Tran, Thi Uyen; Park, Dae Young; Lee, Juchan; Nguyen, Duc Anh; Oh, Jong Hyeok; Yu, Yun Seop; Jeong, Mun Seok

doi:10.1016/j.nantod.2021.101263

Cited by 24 publications

(23 citation statements)

References 56 publications

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“…The underlying reasons can be ascribed to the difficulty of forming a suitable dielectric on 2D materials and interfacial contamination between layers. [112,117] In a 2D HJ TFET, the low SS can also be ensured by BTBT. Taking 2D HJ TFET with p-type degenerated SnSe 2 as source and WSe 2 as channel for example, thermal emission conduction dominates when negative gate voltage is applied (Figure 6a).…”

Section: D Tunneling Fetmentioning

confidence: 99%

“…By transferring 2D materials assisted by polycarbonate and polydimethylsiloxane on to a defect-free poly methyl methacrylate substrate, Duong et al achieved an average value of 46 mV dec −1 over 4 decades and a high on/off ratio of ≈10 8 with a graphene-hBN-MoTe 2 vdW heterostructure (Figure 6d-f). [117] To meet the demand of stateof-the-art MOSFETs, 2D TFETs still face the challenge of realizing a stable and steep SS over a sufficient number of decades as well as a large drive current.…”

Section: D Tunneling Fetmentioning

confidence: 99%

“…[101] Moreover, higher values of both I ON and low I OFF can be realized through the use of the NC ferroelectric dielectric in the transistor compared with that in tunneling-based transistors. [117] Copyright 2021, Elsevier. e) Transfer curves of graphene-hBN-MoTe 2 HJ TFET showing subthermionic switching.…”

Section: D Ferroelectric Fetmentioning

confidence: 99%

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The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

et al. 2022

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2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling‐down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary–metal–oxide semiconductor in order to summarize obstacles to the goal of developing high‐density and low‐power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large‐scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of “more than Moore” research.

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Section: D Tunneling Fetmentioning

confidence: 99%

Section: D Tunneling Fetmentioning

confidence: 99%

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The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

et al. 2022

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“…The SS parameter of transistors determines the gate voltage ( V G ) necessary to improve drain-source current ( I DS ) by 1 order of magnitude . By this definition, the SS can be calculated as …”

Section: The Critical Factor For Low-voltage Ofetsmentioning

confidence: 99%

Low-Voltage Organic Field-Effect Transistors: Challenges, Progress, and Prospects

Ren

Zhang

et al. 2022

ACS Materials Lett.

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The quest for organic field-effect transistors (OFETs) with low operating voltage has become highly compelling in many application areas, such as medical sensors, radio frequency identification (RFID), wearable and stretchable technologies, etc. To this end, considerable efforts have been devoted to decreasing the operation voltage of OFETs while retaining high performance over the last few decades. This Review focuses on the recent progress in the field of low-voltage OFETs. The critical factors to realize low-voltage OFETs are analyzed systematically through establishing the relationships between the operation voltage and subthreshold swing. Further on the strategic approaches for lowering the operation voltage, increasing gate dielectric capacitance, reducing the trap density within the semiconductor layer or at device interfaces, and using the negative capacitor effect, are summarized and discussed. We conclude with an overview of these critical methods and the key challenges to enable the laboratory-to-production transition.

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“…Typically, the quality of contact formation on any 2D materials determines the potential drop at contact/2D material interface (contact resistance), and carrier injection into or absorbance from the 2D material 129 . The direct metallization of 2D contact can also lead to Fermi-level pinning and thereby compromise the Ohmic-nature of the contact 155 . At the same time, the quality of 2D materials are often susceptible to contamination by metallic atom diffusion from contacts 149 .…”

Section: Tfets Based On Van Der Waals Heterostructurementioning

confidence: 99%

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

et al. 2022

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The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design. However, the detrimental short-channel effects and the fundamental limit on the sub-threshold swing (SS) in FET have led to a drastic increase in static and dynamic power consumption. The operational limit of nanoscale transistors motivates the exploration of post-CMOS devices like Tunnel FET (TFET), having steeper SS and immunity toward short channel effects. Thus the field of nanoscale 2D-TFET has gained compelling attention in recent times. The nanoscale TFET, with two-dimensional (2D) semiconductor materials, has shown a significant improvement in terms of higher on-state current and lower sub-threshold swing. In this context, the review presented here has comprehensively covered the gradual development and present state-of-arts in the field of nanoscale 2D-TFET design. The relative merits and demerits of each class of 2D materials are identified, which sheds light on the specific design challenges associated with individual 2D materials. Subsequently, the potential device/material co-optimization strategies for the development of efficient TFET designs are highlighted. Next, the experimental development in 2D-TFET design is discussed, and specific synthesis/fabrication challenges for individual material systems are indicated. Finally, an extensive comparative performance study is presented between the simulated as well as experimentally reported potential 2D materials and state-of-the-art bulk material-based TFETs.

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Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor

Cited by 24 publications

References 56 publications

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

Low-Voltage Organic Field-Effect Transistors: Challenges, Progress, and Prospects

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

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