Gate dielectrics on compound semiconductors

Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices

“…A major obstacle in obtaining a superior GaAs MOSFET is the occurrence of Fermi-level pinning [9][10][11][12], which prevents proper MOS-FET operation. An unpinned interface with an MBE grown gallium oxide [2][3][4]13] has been reported. Other dielectrics and processes are being investigated to look for an improved interface or device.…”

“…MOSFETs based on GaAs are currently investigated as a promising route to enhance CMOS because of their superior charge transport characteristics [1][2][3][4][5][6][7][8][9]. The successful development of deposited oxides for Si CMOS has stimulated GaAs MOSFET research [5][6][7][8][9].…”

In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy

“…A further study of this topic is appropriate because the Ga-oxide growth conditions may affect the interpretation of the discussed experimental work. Using a well established MBE deposition process [23] for depositing gate quality Ga 2 O 3 /Gd x Ga 1À x O 3 layers on GaAs an in-situ investigation of various stages of the Ga 2 O 3 on GaAs growth process will provide some additional insights into the interfacial bonding chemistry and determine whether deposition conditions have any effect on the oxide layer.…”

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

“…The understanding and engineering of the properties of the interface between an insulator film and a III-V(100) compound semiconductor are very important for the development of various devices. [1][2][3][4][5][6][7][8] In particular, silicon dioxide (SiO 2 ) and silicon nitride (SiN x ) layers are routinely deposited onto GaAs(100) and other III-V(100) semiconductors at different steps of device processing. [9][10][11] For example, these dielectrics are used for surface protection, electrical insulation in laser diodes, antireflection coatings, and distributed Bragg reflectors, and for selective quantum well (QW) intermixing.…”

“…2 and 3) in agreement with previous results. 2,5 It can be also understood why Ga atoms have stronger tendency to diffuse toward SiO 2 than SiN x films: it is energetically more favourable to form Ga-O than Ga-N. 19 Furthermore, the difference in the thermal expansion coefficients has been shown to affect also the Ga diffusion; namely, SiO 2 has about 10 times larger expansion coefficient than GaAs, whereas for SiN x /GaAs, the difference is clearly smaller. 11,14,17 As 3d spectra (Fig.…”