Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes

Kanbara, Takeshi; Iwasa, Toshihiro; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu; Iwasa, Yoshihiro

doi:10.1063/1.1842373

Cited by 7 publications

(11 citation statements)

References 27 publications

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“…In Ref. 44 Oscillations in the experimental plot of ␣ vs V g were observed for values of k B T lower than a threshold, which is consistent with our estimate for the level spacing ⌬ . Furthermore, our approach explains naturally the existence of an inflection point T * in the log-log plot of the conductance versus the temperature, for values of V g corresponding to peaks in the plot of ␣.…”

Section: Discussionsupporting

confidence: 80%

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Modulation of Luttinger liquid exponents in multiwalled carbon nanotubes

et al. 2006

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We develop in this paper a theoretical framework that applies to the intermediate regime between the Coulomb blockade and the Luttinger liquid behavior in multiwalled carbon nanotubes. Our main goal is to confront the experimental observations of transport properties, under conditions in which the thermal energy is comparable to the spacing between the single-particle levels. For this purpose we have devised a many-body approach to the one-dimensional electron system, incorporating the effects of a discrete spectrum. We show that, in the crossover regime, the tunneling conductance follows a power-law behavior as a function of the temperature, with an exponent that oscillates with the gate voltage as observed in the experiments. Also in agreement with the experimental observations, a distinctive feature of our approach is the existence of an inflection point in the log-log plots of the conductance vs temperature, at gate voltages corresponding to peaks in the oscillation of the exponent. Moreover, we evaluate the effects of a transverse magnetic field on the transport properties of the multiwalled nanotubes. For fields of the order of 4 T, we find changes in the band structure that may be already significant for the outer shells, leading to an appreciable variation in the powerlaw behavior of the conductance. We then foresee the appearance of sizeable modulations in the exponent of the conductance for higher magnetic fields, as the different subbands are shifted towards the development of flat Landau levels.

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Section: Discussionsupporting

confidence: 80%

“…In a recent experiment Kanbara et al 44 also investigated the gate voltage dependent conductance of a MWNT. In this case it was observed that ␣ vanishes for high values of V g .…”

Section: Discussionmentioning

confidence: 99%

Modulation of Luttinger liquid exponents in multiwalled carbon nanotubes

et al. 2006

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“…We applied precise control of doping in a SWCNT-bundle FET. [23] The inset of Figure 3a shows a scanning electron microscopy (SEM) image of the SWCNT-bundle device. The drain current (I D ) was measured at a source-drain voltage of V SD = -50 mV, applied to a SWCNT via the Pt/Au electrodes.…”

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confidence: 99%

Control of Carrier Density by a Solution Method in Carbon‐Nanotube Devices

et al. 2005

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A new method for controlling the hole density in single‐walled carbon nanotube field‐effect transistors (SWCNT‐FETs) by solution‐based chemical doping is presented. The use of organic molecules that adsorb onto SWCNTs from solution is investigated. The transfer characteristics of the SWCNT‐FETs exhibit continuous and precise shifts in threshold voltages (see Figure) upon doping with F4TCNQ molecules, even in air.

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“…Kruger et al have shown, using an electrochemical gate, that the Fermi level is shifted by around 0.3 eV from the charge neutrality point, which corresponds 6 In [28] the temperature has been shown to reach about 2000 • C in the highbias regime. These measurements have been carried on suspended MWNTs.…”

Section: Discussionmentioning

confidence: 99%

“…We note that these results have been obtained on MWNT devices that have been fabricated following a specific fabrication process (see below). For samples prepared using a different method the results can be different [4][5][6][7][8][9][10][11]. For example, the doping and the meanfree path can be different due to a different device preparation.…”

Section: Introductionmentioning

confidence: 99%

Beyond the linearity of current–voltage characteristics in multiwalled carbon nanotubes

Bourlon¹,

Mikó²,

Forró³

et al. 2006

Semicond. Sci. Technol.

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We present local and non-local electron transport measurements on individual multi-wall nanotubes for bias voltages between 0 and about 4 V. Local current-voltage characteristics are quite linear. In contrast, non-local measurements are highly nonlinear; the differential non-local conductance can even become negative in the high-bias regime. We discuss the relationship between these results and transport parameters such as the elastic length, the number of current carrying shells and the number of conducting modes.

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Gate-induced crossover from unconventional metals to Fermi liquids in multiwalled carbon nanotubes

Cited by 7 publications

References 27 publications

Modulation of Luttinger liquid exponents in multiwalled carbon nanotubes

Modulation of Luttinger liquid exponents in multiwalled carbon nanotubes

Control of Carrier Density by a Solution Method in Carbon‐Nanotube Devices

Beyond the linearity of current–voltage characteristics in multiwalled carbon nanotubes

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