1995
DOI: 10.1116/1.587954
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Gate oxide degradation during polysilicon etching in a parallel-plate plasma-type etcher

Abstract: Gate oxide degradation by transient surge current has been tested during polysilicon etching in a parallel-plate plasma-type etcher. To reduce the transient surge current, rf power is removed gradually at a rate of 50 W/s after 50% overetch. Breakdown voltage distribution measured at a metal–oxide–semiconductor capacitor array structure with gate edges is improved considerably by the ramping down of rf power. This clearly indicates that the transient surge current can cause charge damage to some extent even in… Show more

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Cited by 3 publications
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“…where λ i is the mean free path of ions, χ 01 ≈ 2.405 is the first zero of the zero order Bessel function J 0 and D a is the ambipolar diffusion coefficient [14]. Only radial losses are considered, since there are no axial boundaries and the plasma column extends beyond the resonator.…”
Section: Plasma Modelmentioning
confidence: 99%
“…where λ i is the mean free path of ions, χ 01 ≈ 2.405 is the first zero of the zero order Bessel function J 0 and D a is the ambipolar diffusion coefficient [14]. Only radial losses are considered, since there are no axial boundaries and the plasma column extends beyond the resonator.…”
Section: Plasma Modelmentioning
confidence: 99%
“…The cross sections of chemical reactions used here are adopted from the recently published studies [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39]. The rate coefficients of surface reactions refer to the published studies [40][41][42][43].…”
Section: Description Of the Modelmentioning
confidence: 99%
“…The parameters are the electron temperature, the ion densities, the neutral particle density, and the plasma potential. Such models were constructed for both positive and negative ionized plasma with radio frequency and ECR discharge [42][43][44][45] and also for molecular plasma with dissociation [45]. In the field of electric propulsion, they have been used widely for estimation of thruster performance [46][47][48][49] and are a suitable way to estimate it when comparing various kinds of propellants.…”
Section: Global Model Of the Ion Sourcementioning
confidence: 99%