Gate Oxide Thickness and Drain Current Variation of Dual Gate Tunnel Field Effect Transistor

Howldar, S.; Balaji, B.; Srinivasa Rao, K.

doi:10.5829/ije.2024.37.03c.09

Cited by 4 publications

(2 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This modulation is achieved by applying a voltage to the gate terminal, creating an electric field that controls the flow of charge carriers. In an n-type MOSFET, electrons are the majority carriers, and applying a positive voltage to the gate repels electrons, reducing the conductivity of the channel (5). In a p-type MOSFET, holes are the majority carriers, and a negative voltage on the gate serves a similar purpose.…”

Section: Introductionmentioning

confidence: 99%

Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications

Padmaja,

Vemana Chary,

Erigela

et al. 2024

IJE

View full text Add to dashboard Cite

A High-K Dielectric Dual Metal Gate FinFET (DMG-FinFET) is proposed in this work to improve the drain current and electrical characteristics of the device. The proposed device employing dielectric materials such as Silicon dioxide, Hafnium oxide and Titanium oxide and investigated in 10 nm technology. The architecture represents a critical advancement in transistor design, addressing challenges posed by traditional high-K gate dielectric materials being HfO2 and TiO2. This work employs a comprehensive approach, incorporating simulation techniques to evaluate the performance metrics of DMG FinFET. This investigation encompasses key aspects being transistor characteristics, power consumption, and reliability. This high-k dielectric (HfO2) Dual material Gate -FinFET device achieving improved performance parameters such as Ion= 32.12 mA, Ioff= 33 μA, Gm(max) = 0.045 S, Gds(max) = 0.024 S and Ron(max) = 32.87 kΩ. Therefore this work is suitable for designing high performance devices with high-k dielectric materials being HfO2 and TiO2. The impact of dual metal gate materials on Ion, Ioff, Gm (max), Gds(max) and Ron(max) is calculated and improved 64% compared to conventional device.

show abstract

Section: Introductionmentioning

confidence: 99%

Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications

Padmaja,

Vemana Chary,

Erigela

et al. 2024

IJE

View full text Add to dashboard Cite

show abstract

“…The combination of dielectric modulation and TFETs led to the creation of highly sensitive ultrasensitive and highly efficient biosensors that have the potential to be used in clinical diagnosis and biotechnology due to their ability to detect disease markers at very low concentration units. The dielectric modulated TFET is one of the major steps in biosensor technology that could be used as an instrument for developing healthcare service delivery and research in biology (2,3).…”

mentioning

confidence: 99%

Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor

Buttol,

Balaji

2024

IJE

View full text Add to dashboard Cite

This study introduces a biosensor employing a dielectric-modulated dual material gate tunnel field effect transistor (DM-DMG TFET) in 10 nanometer technology. To detect diverse bio molecules, the biosensor incorporates a nano gap cavity formed through gate overlap on the drain side. The variation in ambipolar current serves as the sensing parameter, influenced by altering the dielectric constants of immobilized bio molecules within the nano cavity. In this paper, the simulation results of biosensor employing a dielectric-modulated dual material gate tunnel field effect transistor with different dielectric constants imposed in nano cavity. A comprehensive examination of the biosensor's performance is conducted, exploring various positions and filling factors of bio molecules within the nano cavity region. This analysis involves a thorough investigation into the device's performance, considering a range of parameters such as drain current, electric field distribution, variations in surface potential, configurations of energy bands, behaviors of carrier concentration, and the Ion/Ioff ratio. The simulations are done using the Silvaco TCAD Atlas tool.

show abstract

Effect of oxygen plasma treatment on the properties of ALD hafnium oxide films

Bulyarskiy,

Litvinova,

Rudakov

et al. 2024

Surfaces and Interfaces

View full text Add to dashboard Cite

Gate Oxide Thickness and Drain Current Variation of Dual Gate Tunnel Field Effect Transistor

Cited by 4 publications

References 26 publications

Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications

Improved Performance Analysis and Design of Dual Metal Gate FinFET for Low Power Digital Applications

Design and Performance Analysis of Gate Overlap Dual Material Tunnel Field Effect Transistor

Effect of oxygen plasma treatment on the properties of ALD hafnium oxide films

Contact Info

Product

Resources

About