Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor

Petit, C.; Zander, D.; Lmimouni, K.; Ternisien, Marc; Tondelier, Denis; Lenfant, S.; Vuillaume, D.

doi:10.1016/j.orgel.2008.07.013

Cited by 23 publications

(14 citation statements)

References 14 publications

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“…This effect was also found for other transistor type sensors and it was reported that the hysteresis is strongly affected by trapping-detrapping effects mostly occurring in the underlying oxide layer of the FET [8], [9]. Usually, this is unwanted and much effort is spent on trying to reduce the hysteresis [10].…”

Section: Introductionsupporting

confidence: 52%

Identification of ammonia and carbon monoxide based on the hysteresis of a gas-sensitive SiC field effect transistor

Bastuck

Bur

Spetz

et al. 2013

2013 Transducers &Amp; Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems

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In this work gate bias cycled operation (GBCO) is used on a gas-sensitive SiC field effect transistor ("GasFET") to increase the sensitivity and selectivity. Gate bias ramps introduce strong hysteresis in the sensor signal. The shape of this hysteresis is shown to be an appropriate feature both for the discrimination of various gases (NH3, CO, NO, CH 4 ) and also different gas concentrations (250 and 500 ppm). The shape is very sensitive to ambient conditions. Thus, the influence of oxygen concentration and relative humidity as well as sensor temperature is investigated and reasons for the observed signal changes are discussed.

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Section: Introductionsupporting

confidence: 52%

Identification of ammonia and carbon monoxide based on the hysteresis of a gas-sensitive SiC field effect transistor

Bastuck

Bur

Spetz

et al. 2013

2013 Transducers &Amp; Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems

View full text Add to dashboard Cite

show abstract

“…The small differences (i.e. a factor 2 to 4) between the currents I DS before and after DPCP exposure measured by the pulsed method ( Figure 5) and the ramp method (Figure 3) are usual [20] and have been ascribed to phenomena such as hysteresis, slow current drift, or local heating which affect the static method and not the pulsed one. It must be noted that the vapor pressure of DPCP was measured in the 500-800 ppb range, which reveals how sensitive these sensors are.…”

Section: à3mentioning

confidence: 97%

Sub‐ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field‐Effect Transistors

et al. 2010

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“…An important issue related to the quality of high-k dielectrics is the presence of threshold and flatband voltage instability when sweeping the gate bias from negative to positive voltages and then back [2][3][4][5][6][7][8][9][10][11]. The nature of these instabilities is still matter of debate.…”

Section: Introductionmentioning

confidence: 99%

HYSTERESIS-LIKE FLATBAND VOLTAGE INSTABILITIES IN Al/Ta2O5-SiO2/Si STRUCTURES AND THEIR CONNECTION WITH J-V CHARACTERISTICS

Novkovski¹,

Paskaleva²,

Atanassova³

2017

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Flatband and current-voltage instabilities in unstressed Al/Ta 2 O 5 -SiO 2 /Si structures were studied in details. It has been found that, after an initial run left on fresh samples, both C-V and J-V characteristics exhibit repeatable patterns. Precisely repeatable counterclockwise hysteresis-like loop in C-V characteristics occurs, while no significant hysteretic behaviour is observed in static J-V characteristics. The reduced instability in J-V characteristics is explained by mutual compensation of two opposite effects owing to the presence of trapped positive charges on slow traps in the interfacial SiO 2 -like layer: (i) flatband voltage shift and (ii) lowering of Fowler-Nordheim tunnelling barrier for holes injected from the Si substrate. Correct determination of equivalent oxide thickness and fast interface state densities requires using the C-V curves obtained during the runs right, because progressive trapping on slow states occurs during the runs left. Value of the oxide charge is to be determined using the value of the flatband voltage obtained from the run left (after an initial run right), since it corresponds to the state of empty slow traps.

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Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor

Cited by 23 publications

References 14 publications

Identification of ammonia and carbon monoxide based on the hysteresis of a gas-sensitive SiC field effect transistor

Identification of ammonia and carbon monoxide based on the hysteresis of a gas-sensitive SiC field effect transistor

Sub‐ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field‐Effect Transistors

HYSTERESIS-LIKE FLATBAND VOLTAGE INSTABILITIES IN Al/Ta2O5-SiO2/Si STRUCTURES AND THEIR CONNECTION WITH J-V CHARACTERISTICS

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