Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III–V semiconductor-based metal–insulator–semiconductor devices

Abstract

Radiation effects on metal-insulator-semiconductor diode energetic ion detectors J. Vac. Sci. Technol. B 6, 513 (1988); 10.1116/1.584061 III-V compound semiconductor insulated gate field effect transistors AIP Conf.We report the properties of silicon nitride films deposited by the electron cyclotron resonance remote plasma enhanced chemical vapor deposition method on Si substrates using SiH 4 and N 2 . The effects of nitrogen/silane gas ratio ͑RϭN 2 /SiH 4 ͒, electron cyclotron resonance power, substrate temperature, and H on growth, refractive index, chemical composition, and etch rate were investigated. Nominally stoichiometric Si 3 N 4 films were obtained with a refractive index of 1.9ϳ2.0 at a wavelength of 632.8 nm. The etch rate of the films in a buffered HF solution ͑7:1͒ was low ͑ϳ0.7 nm/min͒ and increased with increasing H 2 gas flow rate and decreasing substrate temperature during deposition. Fourier transform infrared spectroscopy and high temperature thermal evolution experiments showed very small amounts of H in the films. A leakage current less than 100 pA/cm 2 at a field of 2 MV/cm, a resistivity of Ͼ4ϫ10 17 ⍀ cm, and breakdown strengths of 6 -11 MV/cm at a current density of 1 A/cm 2 were observed. These properties are comparable to those of Si 3 N 4 prepared by conventional high temperature ͑700°C͒ chemical vapor deposition. The performance of GaAs-based field-effect-transistors in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor structure. By taking advantage of an in situ process approach, insulator-GaAs structures were successfully gated with excellent interfacial properties.

Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

“…This same result has been widely reported [29,30,41] and is explained as follows. For high N 2 /SiH 4 gas flow ratios, such as those used in this work, there is an excess of N 2 * activated species, so that deposition rate is controlled by the arrival of silane species at the surface of the film.…”

“…So, a similar H release mechanism may take place. However, it must be noted that the growth rate in this work (15-20 nm/min) is much higher than those reported in references [29], [46], and [48], which makes the release of NH x species less likely, and the effect of this mechanism on the growth rate is less significant than the increase associated to the thermal process discussed above.…”

“…Other authors have reported a decrease of the growth rate when increasing T d for ECR deposited SiN x :H films, for similar deposition temperatures to those used in this work [29,46,48]. In these references the decrease of the growth rate is explained by the release of NH x species, which is enhanced by the increase of T d .…”

“…Concerning the influence of the gas flow ratio, a decrease of the growth rate when decreasing the SiH 4 partial pressure was observed. This is the expected behavior, as silane is the precursor gas which limits the reaction [29,30]. …”

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

“…14,18 On the other hand, when the release of hydrogen leaves unpassivated defects or causes a loss of nitrogen atoms, then a degradation of the performance is observed. 17 In this article, we analyze in detail the influence of the RTA on the physical properties of ECR deposited SiN x :H films in a wide range of compositions-from Si-rich films to N-rich-and analyze the RTA effects on the SiN x :H/semiconductor interface with Si, [19][20][21] In 0.53 Ga 0. 47 As, 22,23 and InP.…”