Radiation effects on metal-insulator-semiconductor diode energetic ion detectors J. Vac. Sci. Technol. B 6, 513 (1988); 10.1116/1.584061 III-V compound semiconductor insulated gate field effect transistors AIP Conf.We report the properties of silicon nitride films deposited by the electron cyclotron resonance remote plasma enhanced chemical vapor deposition method on Si substrates using SiH 4 and N 2 . The effects of nitrogen/silane gas ratio ͑RϭN 2 /SiH 4 ͒, electron cyclotron resonance power, substrate temperature, and H on growth, refractive index, chemical composition, and etch rate were investigated. Nominally stoichiometric Si 3 N 4 films were obtained with a refractive index of 1.9ϳ2.0 at a wavelength of 632.8 nm. The etch rate of the films in a buffered HF solution ͑7:1͒ was low ͑ϳ0.7 nm/min͒ and increased with increasing H 2 gas flow rate and decreasing substrate temperature during deposition. Fourier transform infrared spectroscopy and high temperature thermal evolution experiments showed very small amounts of H in the films. A leakage current less than 100 pA/cm 2 at a field of 2 MV/cm, a resistivity of Ͼ4ϫ10 17 ⍀ cm, and breakdown strengths of 6 -11 MV/cm at a current density of 1 A/cm 2 were observed. These properties are comparable to those of Si 3 N 4 prepared by conventional high temperature ͑700°C͒ chemical vapor deposition. The performance of GaAs-based field-effect-transistors in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor structure. By taking advantage of an in situ process approach, insulator-GaAs structures were successfully gated with excellent interfacial properties.

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