Radiation effects on metal-insulator-semiconductor diode energetic ion detectors J. Vac. Sci. Technol. B 6, 513 (1988); 10.1116/1.584061 III-V compound semiconductor insulated gate field effect transistors AIP Conf.We report the properties of silicon nitride films deposited by the electron cyclotron resonance remote plasma enhanced chemical vapor deposition method on Si substrates using SiH 4 and N 2 . The effects of nitrogen/silane gas ratio ͑RϭN 2 /SiH 4 ͒, electron cyclotron resonance power, substrate temperature, and H on growth, refractive index, chemical composition, and etch rate were investigated. Nominally stoichiometric Si 3 N 4 films were obtained with a refractive index of 1.9ϳ2.0 at a wavelength of 632.8 nm. The etch rate of the films in a buffered HF solution ͑7:1͒ was low ͑ϳ0.7 nm/min͒ and increased with increasing H 2 gas flow rate and decreasing substrate temperature during deposition. Fourier transform infrared spectroscopy and high temperature thermal evolution experiments showed very small amounts of H in the films. A leakage current less than 100 pA/cm 2 at a field of 2 MV/cm, a resistivity of Ͼ4ϫ10 17 ⍀ cm, and breakdown strengths of 6 -11 MV/cm at a current density of 1 A/cm 2 were observed. These properties are comparable to those of Si 3 N 4 prepared by conventional high temperature ͑700°C͒ chemical vapor deposition. The performance of GaAs-based field-effect-transistors in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor structure. By taking advantage of an in situ process approach, insulator-GaAs structures were successfully gated with excellent interfacial properties.

The fabrication of high-quality organic-inorganic hybrid halide perovskite layers is the key prerequisite for the realization of high efficient photon energy harvest and electric energy conversion in their related solar cells. In this article, we report a novel fabrication technique of CH3NH3PbI3 layers based on high temperature chemical vapor reaction. CH3NH3PbI3 layers have been prepared by the reaction of PbI2 films which were deposited by pulsed laser deposition, with CH3NH3I vapor at various temperatures from 160 °C to 210 °C. X-ray diffraction patterns confirm the formation of pure phase, and photoluminescence spectra show the strong peak at around 760 nm. Scanning electron microscopy images confirm the significantly increased average grain size from nearly 1 μm at low reaction temperature of 160 °C to more than 10 μm at high reaction temperature of 200 °C. The solar cells were fabricated, and short-circuit current density of 15.75 mA/cm2, open-circuit voltage of 0.49 V and fill factor of 71.66% have been obtained.

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