Gate stack engineering for GaN lateral power transistors

Yang, Shu; Liu, Shenghou; Cheng, Liu; Hua, Mengyuan; Chen, Kevin J.

doi:10.1088/0268-1242/31/2/024001

Cited by 10 publications

(8 citation statements)

References 46 publications

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“…[ 158,159 ] Hence, interface engineering has been aimed to passivate Ga dangling bonds and compensate N vacancies, which was implemented by applying in situ NH 3 /Ar/N 2 remote plasma pretreatment (RPP) in a plasma‐enhanced atomic layer deposition (PEALD) system. [ 148,159,160 ] A crystalline AlN was observed when the NH 3 /Ar/N 2 RPP was implemented before Al 2 O 3 deposition. The AlN interlayer not only provides superior passivation quality but also prevent the GaN oxidation during Al 2 O 3 deposition.…”

Section: Mis Structurementioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

133

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Section: Mis Structurementioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

133

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“…Nevertheless, the use of SiO 2 as gate dielectric has been reported to yield a more stable V T under PBTI stress than Al 2 O 3 [63]. N incorporation into the bulk of Al 2 O 3 or at the interface with the semiconductor has been shown to improve V T stability [70], [71]. Severe V T shifts have been observed in devices that use SiN x as gate dielectric [59], [68], [72], However, there are also reports that indicate that different deposition techniques yield widely different stability characteristics [59].…”

Section: B Bias-temperature Instability Associated With the Gate Dielectric Of Gan Mis-hemtsmentioning

confidence: 99%

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Alamo

Lee

2019

IEEE Trans. Electron Devices

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GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems. GaN power transistors for electrical power management are also starting to reach the marketplace. From the dawn of this technology, inadequate transistor stability and reliability have represented stumbling blocks preventing widespread commercial use of GaN electronics. Intense research has been devoted to addressing these issues, and great progress has taken place recently. This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.

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“…2). Other approaches for normally off GaN HFETs use recessing of the AlGaN barrier with an insulating gate, enhancement‐mode metal–insulator–semiconductor FET (MISFETs) are realised [9]. However, no intrinsic gate insulator exists for GaN and extrinsic insulator materials suffer from charging with associated hysteresis effects and threshold voltage instabilities [10].…”

Section: Lateral Gan Transistorsmentioning

confidence: 99%

Lateral and vertical power transistors in GaN and Ga ₂ O ₃

Hilt

Bahat‐Treidel

Wolf

et al. 2019

IET Power Electronics

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Vertical silicon carbide transistors and lateral gallium nitride (GaN) transistors for power-electronic applications currently target applications with different voltage and power ratings. Meanwhile, research and development activities continue on vertical GaN transistors and new gallium oxide (Ga 2 O 3) transistors. What are their perspectives in the application and how do they compete against each other and against established transistor technologies? This study discusses the specific characteristics of lateral and vertical GaN and Ga 2 O 3 transistors to assess their strengths and weaknesses.

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Gate stack engineering for GaN lateral power transistors

Cited by 10 publications

References 46 publications

Recent Advances in GaN‐Based Power HEMT Devices

Recent Advances in GaN‐Based Power HEMT Devices

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Lateral and vertical power transistors in GaN and Ga ₂ O ₃

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Gate stack engineering for GaN lateral power transistors

Cited by 10 publications

References 46 publications

Recent Advances in GaN‐Based Power HEMT Devices

Recent Advances in GaN‐Based Power HEMT Devices

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Lateral and vertical power transistors in GaN and Ga 2 O 3

Contact Info

Product

Resources

About

Lateral and vertical power transistors in GaN and Ga ₂ O ₃