Ge-based non-volatile memories

Wei, Na; Zhang, Yi; Chen, Bing; Zhao, Yi

doi:10.35848/1347-4065/ab8e20

Cited by 3 publications

(3 citation statements)

References 27 publications

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“…After the wafer cleaning, 7 nm HfO x was deposited on Ge or Si substrates by Atomic Layer Deposition (ALD). The ozone post oxidation (OPO) is not processed here in contrast with the process of previous HfO x /Ge RRAM [21,22]. It is not only because the interface is vital for previous RRAM stack used in MOSFET, but the stack variable here needs to be the same as the one in MIM devices.…”

Section: Methodsmentioning

confidence: 99%

HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance

et al. 2022

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A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfOx/Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared with metal-insulator-metal (MIM) RRAM devices. Under DC cycling, HfOx/Ge devices exhibit a 100× larger memory window compared to HfOx MIM devices, and a DC sweep of up to 20,000 cycles was achieved with the devices. The devices also realize low static power down to 1 nW as FPGA’s pull-up/pull-down resistors. Thus, HfOx/Ge devices act as a promising candidates for various applications such as FPGA or compute-in-memory, in which both a high ON/OFF ratio and decent endurance are required.

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Section: Methodsmentioning

confidence: 99%

HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance

et al. 2022

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“…In the past decade, amorphous or crystalline germanium nanoparticles (Ge-NPs)-based nanostructures have been extensively studied on the one hand due to their interestingly fundamental properties − and on another hand for potential applications like photonic applications, , optoelectronics, photovoltaics and near-IR detectors, − lithium-ion batteries, , neuromorphic engineering, or memory devices. , This extensive attention is especially due to Ge-NP intrinsic properties compared to Si NPs as those of larger dielectric constant, smaller bulk band gap (Ge = 0.66 eV against Si = 1.1 eV), , larger Bohr exciton radius (Ge = 24.3 nm against Si = 4.5 nm), higher electron and hole mobility, and larger absorption coefficient (tuneable light emission and detection in a wider spectral range). Additionally, the Ge-NPs represent an ideal candidate for use as charge-storing nodes in memory devices. − Most current Ge-NP-based memory devices use SiO 2 as tunnel and/or gate oxide, respectively. , The device’s downscaling is slowed down by SiO 2 limitations . However, the continued scaling of device dimensions necessitates investigating high- k dielectric materials to replace SiO 2 and avoid leakage currents as much as possible .…”

Section: Introductionmentioning

confidence: 99%

Annealing Effects on the Charging–Discharging Mechanism in Trilayer Al₂O₃/Ge/Al₂O₃Memory Structures

Stavarache,

Palade,

Maraloiu

et al. 2024

ACS Appl. Electron. Mater.

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For the development of memory devices for the continuous advancement of IT engineering, a good understanding of the charging–discharging mechanisms in nanocrystalline floating gate memories is crucial to overcoming the current limitations. The charging–discharging mechanism in Al2O3/Ge/Al2O3 trilayer memory structures obtained by magnetron sputtering deposition is investigated as a function of the postdeposition annealing temperature, up to 900 °C. The change by annealing of C–V hysteresis curves from a clockwise type at low temperatures to counterclockwise one in a sample annealed within the intermediary temperature range of 550 to 650 °C, and then, a return to a clockwise type for annealing within the higher temperature range of 800–900 °C was observed. Up to 700 °C, memory performances are constantly improved reaching for 600 °C annealed samples, a memory window of 5.6 V for voltage sweep in the range −1 to +15 V, and good retention characteristics for 650 °C annealed structures, in which the charge loss is only ∼2% after 108 s. When the annealing temperature was increased above 700 °C, a rapid decrease in the memory performance takes place. The annealing-induced changes are explained based on the Ge fast diffusion and nanocrystallization process, in correlation with morphological and structural high-resolution transmission electron microscopy results.

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“…Due to the explosive growth of data in the big data era, the current development of traditional nonvolatile memories is facing severe challenges in terms of shrinking size, 1 reducing power consumption, 2 increasing switching speed, 3 and so on. Therefore, the search for new storage technologies and devices has become a hot topic of current research.…”

Section: Introductionmentioning

confidence: 99%