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With the emerging of Internet of Things, low power memories with the fair performance are attracting more and more attention in both industry and academia. Specially, novel non-volatile memory technology plays the key role in chips pursuing a tradeoff among area, energy, storage and speed. Recently, lots of reports focus on a new non-volatile device technology which is named memdiode (MD) using germanium material. In this paper, we will review the concept of MD and its applications in conventional non-volatile resistive switching memory devices, ternary content addressable memory, and NAND-like flash memory devices.

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A trade-off between the memory window and the endurance exists for transition-metal-oxide RRAM. In this work, we demonstrated that HfOx/Ge-based metal-insulator-semiconductor RRAM devices possess both a larger memory window and longer endurance compared with metal-insulator-metal (MIM) RRAM devices. Under DC cycling, HfOx/Ge devices exhibit a 100× larger memory window compared to HfOx MIM devices, and a DC sweep of up to 20,000 cycles was achieved with the devices. The devices also realize low static power down to 1 nW as FPGA’s pull-up/pull-down resistors. Thus, HfOx/Ge devices act as a promising candidates for various applications such as FPGA or compute-in-memory, in which both a high ON/OFF ratio and decent endurance are required.

In this paper, we have demonstrated the high hole mobility in accumulation-mode Ge-on-insulator (AM-GeOI) pMOSFETs with back interface engineering by low-temperature H2 annealing. The hole mobility of 227 cm2/Vs was obtained for the device annealed at 400 oC in H2 ambient, which is 32% higher than that of control device. A significant improvement in carrier mobility was attributed to two main factors: 1) the atomic rearrangement of Si and Ge in the intermixing layer located at the back interface, and 2) partial relaxation of tensile strain by thermal treatment.