2000
DOI: 10.1016/s0040-6090(00)00828-2
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Ge thin film growth on Si(111) surface using hydrogen surfactant

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Cited by 13 publications
(6 citation statements)
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“…Hydrogen (H) termination of Si surfaces is one common technique for controlling the silicide reaction, because hydrogen acts either as a passivating layer or as a surfactant. There have been many studies about metal film growth on H-terminated Si surfaces [44][45][46][47][48][49][50][51][52]. Hirose et al [45] studied Ni film growth on H-terminated Si(111) surfaces at room temperature.…”
Section: Strain Due To Ni Diffusion Beneath Hydrogen-terminated Si(11...mentioning
confidence: 99%
“…Hydrogen (H) termination of Si surfaces is one common technique for controlling the silicide reaction, because hydrogen acts either as a passivating layer or as a surfactant. There have been many studies about metal film growth on H-terminated Si surfaces [44][45][46][47][48][49][50][51][52]. Hirose et al [45] studied Ni film growth on H-terminated Si(111) surfaces at room temperature.…”
Section: Strain Due To Ni Diffusion Beneath Hydrogen-terminated Si(11...mentioning
confidence: 99%
“…It has been demonstrated in many growth systems that preadsorption of suitable surfactants can change the growth mode from three-dimensional͑3D͒ islanding to layer-by-layer growth. [7][8][9][10][11][12] In spite of many years of intensive research, the atomistic mechanism of surfactant action is not yet well understood.…”
Section: Introductionmentioning
confidence: 99%
“…Hydrogen migration, adsorption on and desorption from the SiGe surfaces play important roles in the growth kinetics of these epitaxial processes. 12,13) In addition, hydrogen and the Si (or Ge) surface is one of the most well-defined adsorbate/surface systems in surface science. 14) Despite its significance in science and technology, many local details concerning hydrogen interaction with SiGe crystalline surfaces remain unknown.…”
Section: Introductionmentioning
confidence: 99%