Ge_2Sb_15Bi_05Te_5 thin film as inorganic photoresist

Xi, Hongzhu; Liu, Qian; Tian, Ye; Wang, Yongsheng; Guo, Shengming; Chu, Maoyou

doi:10.1364/ome.2.000461

Cited by 23 publications

(23 citation statements)

References 24 publications

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“…On the other hand, various heat-mode resists have been found for lithography such as organic polymers [8] , metallic alloys [9,10] , and chalcogenide phase-change materials [11][12][13] . Among others, chalcogenide material has recently been widely investigated as a heat-mode resist due to its low surface roughness, easy preparation, phase-change threshold effect, and atom-scale resolution [1] .…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, high density (the duty cycle of 1:1), multiscale (the minimum size varying from 90 nm to 2.7 μm), and arbitrary patterns have also been realized [15] . Besides, chalcogenide heat-mode resist also exhibits high etching resistance, and the patterns can be transferred onto various substrates, including silicon [11,16] , fused silica glass [12,17] , GaAs [18] , etc. These researches have greatly promoted the development of laser lithography.…”

Section: Introductionmentioning

confidence: 99%

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AgGeSbTe thin film as a negative heat-mode resist for dry lithography

Chen

Wang

et al. 2022

Chin. Opt. Lett.

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An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography. It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF 3 =O 2 mixed gases. The etched sidewall is steep without the obvious lateral corrosion. The lithographic characteristics and underlying physical mechanisms are analyzed. Besides, results of X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy further indicate that laser irradiation causes the formation of Ge, Sb, and AgTe crystals, which is the basis of etching selectivity. In addition, the etching selectivity of Si to AgGeSbTe resist is as high as 19 at SF 6 =Ar mixed gases, possessing good etching resistance. It is believed that the AgGeSbTe thin film is a promising heat-mode resist for dry lithography.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

AgGeSbTe thin film as a negative heat-mode resist for dry lithography

Chen

Wang

et al. 2022

Chin. Opt. Lett.

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“…In recent years, organic materials are considered very promising to manufacture photoresist because they have good photothermal sensitivity, long lifetime, processable in vacuum, clear border line between exposed and un-exposed area, light molecule weight and stronger chemical bonding 3 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Phenolic-Based Resist Materials for Photolithography

Sutikno¹,

Hakim²,

Sugianto³

2016

Orient. J. Chem

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Phenol-based photoresist for photolithography application is successfully developed in this research namely by mixing phenolic resin with ethanol solvent and sodium acetate 3-hydrate 30% of phenolic resin mass. Novolac phenolic resin is made by mixing formaldehyde and phenol in mol ratio 2,8:1 catalyzed using NaOH. Phenolic resin is made at heating temperature of 85°C and stirring rotation speed of 1000 rpm. Photoresist thin film is spincoated on the glass substrate and prebaked on the hotplate at 95°C for 60 s. The research result shows that microstructures of resist films which are manufactured of resol phenolic resin seem more homogeneous than that of novolac phenolic resin. The maximum absorbance is in the wavelength range of 380-500 nm, its density and viscosity are 1,41 g/ml and 198 centipoise, respectively.

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“…4,5 To meet the requirements of the full-vacuum manufacture, the chalcogenide phase-change resist will be a powerful candidate due to its extremely high resolution, broad spectral response, and preparation and etching in a vacuum environment. [6][7][8][9] In the 1970s, B. T. Kolomiets et al first studied the As 2 S 3 -based and As 2 Se 3 -based chalcogenide semiconductors as inorganic resists. 10,11 These chalcogenides could be used as positive or negative resists, depending on the different developers.…”

Section: Introductionmentioning

confidence: 99%

A study on inorganic phase-change resist Ge₂Sb_2(1−x)Bi_2xTe₅and its mechanism

Zheng

Xi³

et al. 2014

Phys. Chem. Chem. Phys.

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The inorganic phase-change photoresist Ge2Sb1.5Bi0.5Te5 has a lot of advantages such as the two-sides of the photoresist, a large difference in the etching rate between it and Si, and so on, making it a promising candidate for use in the full-vacuum manufacture of the next generation ultra-large scale integrated circuits (ULSI). However, the physical origin of its excellent properties is still unclear, hindering its improvement and the optimization of its performance. In this work, we extended the Ge2Sb1.5Bi0.5Te5 to Ge2Sb2(1-x)Bi2xTe5 (GSBT, x = 0.1, 0.25, 0.35) and further investigated their properties. Using X-ray diffraction and X-ray absorption fine structure (XAFS) analyses, we built the structures of crystalline and amorphous GSBT, and attributed the excellent physical and chemical properties of crystalline GBST to the different atomic structures compared to amorphous GBST. Moreover, we clarified that the performance of GSBT was enhanced by the increase of Bi, accompanied by a decrease of the phase-change temperature, and gave a criterion for improving GSBT.

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Ge_2Sb_15Bi_05Te_5 thin film as inorganic photoresist

Cited by 23 publications

References 24 publications

AgGeSbTe thin film as a negative heat-mode resist for dry lithography

AgGeSbTe thin film as a negative heat-mode resist for dry lithography

Synthesis of Phenolic-Based Resist Materials for Photolithography

A study on inorganic phase-change resist Ge₂Sb_2(1−x)Bi_2xTe₅and its mechanism

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Ge_2Sb_15Bi_05Te_5 thin film as inorganic photoresist

Cited by 23 publications

References 24 publications

AgGeSbTe thin film as a negative heat-mode resist for dry lithography

AgGeSbTe thin film as a negative heat-mode resist for dry lithography

Synthesis of Phenolic-Based Resist Materials for Photolithography

A study on inorganic phase-change resist Ge2Sb2(1−x)Bi2xTe5and its mechanism

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Product

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A study on inorganic phase-change resist Ge₂Sb_2(1−x)Bi_2xTe₅and its mechanism