Generalized Einstein relation for the diffusivity-mobility ratio in multi-band degenerate semiconductors

Nag, B. R.; Chakravarti, A. N.; Basu, P. K.

doi:10.1002/pssa.2210680159

Cited by 30 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For these exceptional cases the equation (10) should be used for the evalution of DMR. For inversion layers under electric quantum limit, equation (12) can be used. Equation (11) is also valid for heterostructures if the contribution of the charge density to the internal potential is negligible.…”

Section: Introductionmentioning

confidence: 99%

“…Landsberg first pointed out that the Einstein relation for electronic materials having degenerate electron concentration is essentially determined by their energy band structures [4]. The nature of the variations of the DMR under different physical conditions has been studied in the literature [5][6][7][8][9][10][11][12][13][14][15][16][17][18] and some of the important features, which have appeard from these studies, are:…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A simple theoretical analysis of the Einstein relation for the DMR (diffusivity-mobility ratio) in Nono compounds on the basis of k.p formalism

Roy

2011

SPIE Proceedings

View full text Add to dashboard Cite

An attempt is made to study the Einstein relation for the diffusivity-mobility ratio (DMR) in nonlinear optical and Optoelectronic compounds on the basis of a newly formulated electron energy spectrum. The results for ternary, III-V and quaternary types of optoelectronic materials form a special case of our generalized investigation. I have also studied the DMR in II-VI, Bi, IV-VI and stressed materials on the basis of various band models as applicable for such focused materials. It has been found taking n-Cd 3 As 2 , n-CdGeAs 2 , n-InAs, n-InSb, n-Hg 1-x Cd x Te, n-In 1-x Ga x As y P 1-y lattice matched to InP, CdS, Bi, PbS, PbTe, PbSe and stressed InSb as examples of the aforementioned compounds that the DMR increases with increasing electron concentration in various manners for different band constants of the said materials and the rates of variation are totally band structure dependent. Now the well-known results for non-degenerate wide gap optical and Optoelectronic materials have been obtained as special cases of our generalized theory under definite limiting background.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A simple theoretical analysis of the Einstein relation for the DMR (diffusivity-mobility ratio) in Nono compounds on the basis of k.p formalism

Roy

2011

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

Theoretical Analysis of the Oscillatory Diffusivity‐Mobility Ratio in Degenerate n‐InSb in the Presence of a Quantizing Magnetic Field

Ghatak

Mondal

1987

Physica Status Solidi (b)

View full text Add to dashboard Cite

An attempt is made to study theoretically the dependence of the Einstein relation for the diffusivity-mobility ratio of the electrons on the reciprocal quantizing magnetic field in degenerate n-InSb on the basis of the fourth order in effective mass theory and taking into account the interactions of the conduction, heavy-hole, light-hole and the split-off bands. The results obtained are then compared to those derived on the basis of the well-known three-band Kane model since many authors have continued to use the three-band Kane model for the same semiconductor. It is observed that the three-band Kane model for n-InSb exhibits smaller values of the diffusivitymobility ratio and the same ratio shows an oscillatory magnetic field dependence as expected in both the cases, since the origin of the oscillations in the Einstein relation is the same as that of the Shubnikov-de Haas oscillations. Besides the corresponding results for isotropic parabolic energy bands, both, in the presence and absence of magnetic quantization, are also obtained from the expressions derived.Es wird versucht, die Abhiingigkeit der Einsteinbeziehung fur das Diffusions-Beweglichkeitsverhiltnis der Elektroneii vom reziproken quantisierendem Magnetfeld in entartetem n-InSb auf der Grundlage vierter Ordnung in der Effektivmassentheorie und unter Beriicksichtigung der Wechselwirkungen des Leitungsbandes, der Bander der schweren und leichten Locher und des abgespaltenen Bandes theoretisch zu untersuchen. Die erhaltenen Ergebnisse werden dann mit denen verglichen, die auf der Grundlage des gut bekannten Kane'schen Drei-Bander-Modells abgeleitet werden, da viele Autoren noch immer das Kane'sche Dreibandermode llfur den genannten Halbleiter benutzen. Es wird beobachtet, daR das Kane'sche Dreibandermodell fur n-InSb kleinere Werte des Diffusions-Beweglichkeitsverhaltnis aufweist und da13 dasselbe VerhLltnis eine oszillatorische Magnetfeldabhangigkeit zeigt, wie in beiden Fallen erwartet wird, da der Ursprung der Oszillationen in der Einsteinbeziehung derselbe ist, wie der der Shubnikov-de Haas-Oszillationen. Dariiberhinaus werden die entsprechenden Ergebnisse fur isotrope parabolische Energiebander sowohl bei Anwesenheit als auch bei Abwesenheit magnetischer Quantisierung ebenfalls aus den abgeleiteten Ausdrucken erhalten.

show abstract

On the Einstein Relation in n‐Channel Inversion Layers on Ternary Semiconductors under Magnetic Quantization

Ghatak

Mondal

1988

Physica Status Solidi (b)

View full text Add to dashboard Cite

An attempt is made to investigate the Einstein relation for the diffiiiivity-mobility ratio of the carriers in n-channel inversion layers on ternary semiconductors in the presence of a quantizing magnetic field, on the basis of the fourth order in effective mass theory and taking into account the interactions of the conduction, heavy-hole, light-hole and split-off bands, without any approximations of weak or strong electric field limits and incorporating the influences of electron spin and Dingle temperature, respectively. It is found, taking n-channel inversion layers on Hgi -&&Te as an example, t h a t the Einstein relation exhibits an oscillatory magnetic field dependence and the oscillatory spikes are much sharper with large numerical magnitudes even in the presence of broadening in inversion layers. The nature of oscillation is quite different t o those obtained for bulk specimen of the same material under magnetic quantization. I n addition, the corresponding well-known results for isotropic parabolic energy bands form the special cases of the generalized expressions. Es werden die Einsteinbeziehungen fur das Diffusions-Beweglichkeitsverhaltnis der Ladungstrager in n-Kanal-Inversionsschichten von ternaren Halbleitern in einem quantisierenden

show abstract

Generalized Einstein relation for the diffusivity-mobility ratio in multi-band degenerate semiconductors

Cited by 30 publications

References 16 publications

A simple theoretical analysis of the Einstein relation for the DMR (diffusivity-mobility ratio) in Nono compounds on the basis of k.p formalism

A simple theoretical analysis of the Einstein relation for the DMR (diffusivity-mobility ratio) in Nono compounds on the basis of k.p formalism

Theoretical Analysis of the Oscillatory Diffusivity‐Mobility Ratio in Degenerate n‐InSb in the Presence of a Quantizing Magnetic Field

On the Einstein Relation in n‐Channel Inversion Layers on Ternary Semiconductors under Magnetic Quantization

Contact Info

Product

Resources

About