Generation of electro-thermal models of integrated power electronics modules using a novel synthesis technique

Greco, Giuseppe; Vinci, Giovanni; Raciti, A.; Cristaldi, Davide

doi:10.1109/therminic.2013.6675200

Cited by 14 publications

(3 citation statements)

References 8 publications

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“…A equivalent model is developed on the basis of the thermal network method (TNM) [26][27][28][29][30][31][32] for the validation of experimental results. In the equivalent model, thermal resistance and capacitance derived from material properties and size form a box-shaped mesh, as shown in Fig.…”

Section: Equivalent Model For Transient Thermal Analysismentioning

confidence: 99%

Investigation of transient thermal dissipation in thinned LSI for advanced packaging

Araga¹,

Shimamoto²,

Melamed³

et al. 2018

Jpn. J. Appl. Phys.

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Thinning of LSI is necessary for superior form factor and performance in dense cutting-edge packaging technologies. At the same time, degradation of thermal characteristics caused by the steep thermal gradient on LSIs with thinned base silicon is a concern. To manage a thermal environment in advanced packages, thermal characteristics of the thinned LSIs must be clarified. In this study, static and dynamic thermal dissipations were analyzed before and after thinning silicon to determine variations of thermal characteristics in thinned LSI. Measurement results revealed that silicon thinning affects dynamic thermal characteristics as well as static one. The transient variations of thermal characteristics of thinned LSI are precisely verified by analysis using an equivalent model based on the thermal network method. The results of analysis suggest that transient thermal characteristics can be easily estimated by employing the equivalent model.

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Section: Equivalent Model For Transient Thermal Analysismentioning

confidence: 99%

Investigation of transient thermal dissipation in thinned LSI for advanced packaging

Araga¹,

Shimamoto²,

Melamed³

et al. 2018

Jpn. J. Appl. Phys.

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show abstract

“…On the other hand, faster switching means higher current and voltage slopes inside application circuitries, and the related radiative effects could become an important aspect to be analysed and pondered [1,2]. Among the several solutions adopted for managing large power amounts, the one based on integrated power electronics modules (IPEMs) (Figure 1) is very effective in the control of thermal aspects [3]. IPEMs can usually be built by adopting several technologies on the basis of different solutions such as discrete components on insulated-metal substrates (IMS), dices on IMS, or substrate-free molded structures according to the context in which they have to be used.…”

Section: Introductionmentioning

confidence: 99%

Electromagnetic Simulation Flow for Integrated Power Electronics Modules

et al. 2022

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The growing use of electric vehicles is requiring the implementation of power electronics applications with ever faster devices, such as silicon carbide (SiC) MOSFET, to reduce switching power losses and reach higher power density, with the final objective of improving performance and lowering the system cost. A side effect of such faster switching devices is the generation of high-frequency harmonics with significant energy, so their impact must be evaluated in terms of conducted and radiated electromagnetic interference (EMI). The optimal design of PCBs and filters for facing electromagnetic compatibility issues requires properly estimating the EMI level of different design solutions. Analysis of the current state of the art reveals that previous approaches can not effectively support a design focusing on a reduction in radiated EMI. To surpass these limits, the paper defines an electromagnetic simulation flow aimed at evaluating the radiative fields in the case of an integrated power electronics module operating in automotive applications and featuring fast SiC power devices. Then, the proposed simulation was applied to an LLC resonant converter featuring an STMicroelectronics SiC-based ACEPACK module. The work also highlights that future research efforts must concentrate on finding the best compromise between computational effort and estimation accuracy.

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“…Compact thermal models expressed as thermal resistorcapacitor (RC) networks were more widely employed to rapidly predict junction temperatures or the temperatures at a few critical locations in the power modules for electro-thermal design, thermal management, reliability and lifetime prediction [15][16][17][18][19][20][21][22][23][24]. In the simplified cases, individual power device might be considered and one dimensional heat conduction was assumed to predict the junction temperatures [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Castellazzi

Eleffendi

et al. 2018

IEEE Trans. Power Electron.

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AbstractThis paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half bridge, two-level SiC power module with 6 MOSFETs and can be used for coupled electro-thermal simulation. The finite element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical RC network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the 6 MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the 6 MOSFETs under switching frequencies from 5 kHz to 100 kHz which demonstrate the good electrothermal performance of the designed power module.Index TermsMOSFETs, SiC power module, finite element methods, RC network, curve fitting, three-phase inverters.

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Generation of electro-thermal models of integrated power electronics modules using a novel synthesis technique

Cited by 14 publications

References 8 publications

Investigation of transient thermal dissipation in thinned LSI for advanced packaging

Investigation of transient thermal dissipation in thinned LSI for advanced packaging

Electromagnetic Simulation Flow for Integrated Power Electronics Modules

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

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