Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures

Silicon MOSFET devices electrical parameters evolution at high temperatures

“…The decrease of R sh value with elevated temperature indicates an increasing in the number of charges passing through the drain‐source contacts at low biasing. These charges having certain activation energy are thermally excited and are gaining excessive energies, thus the generation of carriers occurs after thermal dissociation of neutral complexes (Gol'dman et al , 2000). We assume that neutral traps are originally present at the structure surface and in the semiconductor bulk and are facing phonons and lattice vibrations caused by the temperature elevation.…”

An approach to increase the integration rate of planar drift heterobipolar transistors

“…This change leads to decrease in elements integrated circuits [21]. One way to increase performance of elements of integrated circuits is determination of materials with higher values of charge carriers mobility [1][2][3][4][5][6][7][8][9][10][11][12][13][14][22][23][24][25]. Other ways to increase performance are elaboration of new technological processes and modification of existing ones.…”

“…Currently, there is an intensive increase in the integration rate of elements of integrated circuits (p-n-junctions, transistors,…) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. At the same time this has attracted an increasing interest in their performance.…”