2011
DOI: 10.1016/j.jlumin.2011.03.020
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Generation of optically active states in a-SiNx by thermal treatment

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“…Many groups attributed the photoluminescence (PL) peak blueshift with decreasing NC size to quantum confined excitons in the nitride-embedded Si NCs or amorphous silicon quantum dots (Si QDs). [9][10][11][12][13][14] Alternatively, radiative defects [15][16][17][18] or band tail luminescence 11,16,19 was suggested to explain the PL. In this work, we present evidence that PL emission from quantum confined excitons in nitride-embedded Si NCs is very unlikely due to the quenching effect of abundant non-radiative defects and a possible loss of confinement potential due to extensive tail states in Si 3 N 4 .…”
Section: Introductionmentioning
confidence: 99%
“…Many groups attributed the photoluminescence (PL) peak blueshift with decreasing NC size to quantum confined excitons in the nitride-embedded Si NCs or amorphous silicon quantum dots (Si QDs). [9][10][11][12][13][14] Alternatively, radiative defects [15][16][17][18] or band tail luminescence 11,16,19 was suggested to explain the PL. In this work, we present evidence that PL emission from quantum confined excitons in nitride-embedded Si NCs is very unlikely due to the quenching effect of abundant non-radiative defects and a possible loss of confinement potential due to extensive tail states in Si 3 N 4 .…”
Section: Introductionmentioning
confidence: 99%