Generation of positive and negative charges under Fowler–Nordheim injection and breakdown

Abstract

Characteristics shifts and time to breakdown of metal–oxide–semiconductor devices due to the Fowler–Nordheim current were investigated. The characteristics shifts were changed by holes and electrons generated in the gate oxides. Distribution of the holes and electrons shows injections of holes from anode electrodes into the gate oxide and uniform generation of electron traps except for tunneling distance of the Fowler–Nordheim current. Moreover, correlations between magnitude of gate electric fields calculated from the distribution and the time to breakdown show the breakdown occurring without impact ionizations in the gate oxide.

Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

“…Increase of DV CC corresponds to electron trapping in the dielectric and decrease to hole trapping [4,5]. Computer data processing of the C OX DV CC vs. Q INJ curves performed on the basis of the model for first order charge trapping, described by expression (1), allows one to calculate the capture cross-sections S t for main traps in the RE-doped oxides (S th1 E3 Â 10 À14 cm 2 , S te1 E1 Â 10 À14 cm 2 , S te3 E2 Â 10 À19 -1 Â 10 À20 cm 2 ).…”

Degradation of Oxide Properties Caused by Low-Level Metallic Contamination

“…The population of such defects results in SILC, which characterizes the oxide reliability. [13][14][15] In a similar fashion, J-E ox testing of capacitors at oxide fields above the onset of F-N conduction, the F-N knee, produces defects that lead to dielectric breakdown. The time of charging and the nominal corona current provide the stress fluence, which creates the SILC.…”