Geometry Study of an Isotropic 3D Silicon Hall Sensor

Sander, C.; Leube, Carsten; Aftab, Taimur; Ruther, Patrick; Oliver, Paul

doi:10.1016/j.proeng.2015.08.577

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…In currently practical applications, we have to employ three one-dimensional (1D) Hall devices perpendicular to each other to measure the 3D magnetic field [8,22]. However, in this work, we can simultaneously detect the 3D field only in one single chip.…”

Section: Operation Principlementioning

confidence: 99%

High-temperature three-dimensional GaN-based hall sensors for magnetic field detection

Huang¹,

Zhang²,

Cao³

et al. 2020

J. Phys. D: Appl. Phys.

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Three-dimensional (3D) high-temperature Hall sensors are strongly required in various applications such as in the automotive and aircraft engines and in the diagnostic system of the thermonuclear reactors. In this paper, we propose a novel Hall sensor based on the wide-bandgap GaN-based materials on a single chip with greatly reduced area which can simultaneously detect 3D magnetic fields at high temperature up to 650 K. The device is analysed and demonstrated by performing the technology computer-aided design simulations, and significantly improved performances are achieved by employing space isolation and passivation scheme to effectively reduce the carrier interference from each dimension. Finally, high current-related magnetic sensitivities are found and the typical values are 128.6, 88.1, and 49.9 V A−1 T−1 on x, y and z axes, respectively, at room temperature. And the temperature coefficients are as low as −286.4, −366.8, and −202.9 ppm K−1, respectively. Moreover, dramatically improved cross-sensitivities are revealed and the maximum value is less than 1.0% at B ≤ 1.0 T which is much lower compared with other currently reported data. The work provides a new technical approach to realize a single-chip 3D magnetic sensor which is promising especially for high-temperature applications.

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Section: Operation Principlementioning

confidence: 99%

High-temperature three-dimensional GaN-based hall sensors for magnetic field detection

Huang¹,

Zhang²,

Cao³

et al. 2020

J. Phys. D: Appl. Phys.

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“…In the angle measurement, the multi-directional (2D) sensor is rotated inside the electromagnetic field, and the Hall voltages of the rotational angles, as a function of the sine and cosine functions, determined. In principle, the amplitudes of the sine and cosine curves are shifted 90° [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Contactless Silicon-Based Multi-Dimensional Hall Sensor with Simultaneous Magnetic Sensing and Omni-Rotational Angle Measurement

Kaewjumras

Prabket

Titiroongruang

et al. 2019

JERA

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This experimental research proposes a contactless silicon-based two-dimensional (2D) Hall sensor capable of simultaneous parallel-and perpendicular-directional magnetic sensing, with a 360° angle measurement. The Hall sensor was of non-symmetrical five-ohmic contact configuration (C1 – C5). In the study, experiments were carried out in three stages. In the first-stage experiment, the current (I) and voltage (V) of the 2D Hall sensor were determined under three schemes: schemes A (C1&C2), B (C2&C5), and C (C3&C4). In the second-stage experiment, the parallel and perpendicular absolute sensitivities of the 2D sensor were examined. Considering the discrepancy between the parallel and perpendicular absolute sensitivities, signal conditioning circuitry was incorporated into the sensor system to compensate, and the rotational angles measured in the final-stage experiment. The results revealed that the I-V curves were dominantly linear, corresponding to Ohm’s law. However, the parallel and perpendicular absolute sensitivities were low and unequal. Thus, signal conditioning circuitry was incorporated into the system to address the discrepancy and improve the performance. Importantly, the 2D Hall sensor exhibited a mere ±3odiscrepancy between the measured and reference rotational angles, given the magnetic flux density of 1000 G, with the hysteresis error of 2.8%. In essence, the proposed contactless silicon-based 2D Hall sensor possesses high potential for high-precision industrial applications.

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