Monolithic Isotropic 3D Silicon Hall Sensor

Sander, C.; Leube, Carsten; Aftab, Taimur; Ruther, Patrick; Oliver, Paul

doi:10.1016/j.sna.2016.06.038

Cited by 10 publications

(6 citation statements)

References 46 publications

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“…The sensitivities in the horizontal and vertical directions cannot be optimized simultaneously due to the opposite demands on the active region [ 13 ]. Though a balanced performance is achieved [ 14 , 15 , 16 ], there is a compromise in one of sensitivities in the horizontal and vertical directions. In our work, the sensitivities of x , y , and z can reach 91.70 V/AT, 92.36 V/AT, and 87.10V/AT by adjusting the depth of the active region and P-type layers, albeit in COMSOL.…”

Section: Improvement Of the Cross-shaped 3d Hall Devicementioning

confidence: 99%

“…To solve these problems, horizontal and vertical Hall devices were integrated into the same chip [ 7 , 8 , 9 , 10 , 11 , 12 ]. Besides this, in virtue of different biases, a single device can be also used for the measurement [ 13 , 14 , 15 , 16 ]. Current-related sensitivity ( S I ), a main performance parameter of Hall sensors, is related to the doping concentration of the active region and the thickness parallel to the magnetic field.…”

Section: Introductionmentioning

confidence: 99%

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A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Tang

Lyu

Wang

et al. 2018

Sensors

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In this paper, a new single-device three-dimensional (3D) Hall sensor called a cross-shaped 3D Hall device is designed based on the five-contact vertical Hall device. Some of the device parameters are based on 0.18 μm BCDliteTM technology provided by GLOBALFOUNDRIES. Two-dimensional (2D) and 3D finite element models implemented in COMSOL are applied to understand the device behavior under a constant magnetic field. Besides this, the influence of the sensing contacts, active region’s depth, and P-type layers are taken into account by analyzing the distribution of the voltage along the top edge and the current density inside the devices. Due to the short-circuiting effect, the sensing contacts lead to degradation in sensitivities. The P-type layers and a deeper active region in turn are responsible for the improvement of sensitivities. To distinguish the P-type layer from the active region which plays the dominant role in reducing the short-circuiting effect, the current-related sensitivity of the top edge (Stop) is defined. It is found that the short-circuiting effect fades as the depth of the active region grows. Despite the P-type layers, the behavior changes a little. When the depth of the active region is 7 μm and the thickness of the P-type layers is 3 μm, the sensitivities in the x, y, and z directions can reach 91.70 V/AT, 92.36 V/AT, and 87.10 V/AT, respectively.

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Section: Improvement Of the Cross-shaped 3d Hall Devicementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Tang

Lyu

Wang

et al. 2018

Sensors

View full text Add to dashboard Cite

show abstract

“…The Hall device is the most critical part of a 3D Hall sensor for magnetoelectric conversion [1,2]. The vertical Hall device is used to detect the magnetic field parallel to the sensor surface, and is still in the development stage due to its special structure.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Orthogonal Coupling Structure Based on Double Three-Contact Vertical Hall Device

Wei

2019

Micromachines

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A vertical Hall device is an important component of 3D Hall sensors, used for detecting magnetic fields parallel to the sensor surface. The Hall devices described in existing research still have problems, such as large offset voltage and low sensitivity. Aiming to solve these problems, this study proposes a double three-contact vertical Hall device with low offset voltage, and a conformal mapping analysis method to improve the sensitivity of the device. Secondly, an orthogonal coupling structure composed of two sets of double three-contact vertical Hall devices is proposed, which further reduces the offset voltage of the device. Finally, the TCAD simulation software was used to analyze the performance of the devices, and an existing vertical Hall device was compared to ours. The results show that the orthogonal coupling structure in this study exhibits better performance, reaching an average voltage sensitivity of 17.5222 mV/VT and an average offset voltage of about 0.075 mV. In addition, the structure has the same magnitude of offset voltage in the four phases of the rotating current method. This characteristic enables the back-end circuit to more accurately filter out the offset voltage and acquire the Hall signal.

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“…In the angle measurement, the multi-directional (2D) sensor is rotated inside the electromagnetic field, and the Hall voltages of the rotational angles, as a function of the sine and cosine functions, determined. In principle, the amplitudes of the sine and cosine curves are shifted 90° [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Contactless Silicon-Based Multi-Dimensional Hall Sensor with Simultaneous Magnetic Sensing and Omni-Rotational Angle Measurement

Kaewjumras

Prabket

Titiroongruang

et al. 2019

JERA

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This experimental research proposes a contactless silicon-based two-dimensional (2D) Hall sensor capable of simultaneous parallel-and perpendicular-directional magnetic sensing, with a 360° angle measurement. The Hall sensor was of non-symmetrical five-ohmic contact configuration (C1 – C5). In the study, experiments were carried out in three stages. In the first-stage experiment, the current (I) and voltage (V) of the 2D Hall sensor were determined under three schemes: schemes A (C1&C2), B (C2&C5), and C (C3&C4). In the second-stage experiment, the parallel and perpendicular absolute sensitivities of the 2D sensor were examined. Considering the discrepancy between the parallel and perpendicular absolute sensitivities, signal conditioning circuitry was incorporated into the sensor system to compensate, and the rotational angles measured in the final-stage experiment. The results revealed that the I-V curves were dominantly linear, corresponding to Ohm’s law. However, the parallel and perpendicular absolute sensitivities were low and unequal. Thus, signal conditioning circuitry was incorporated into the system to address the discrepancy and improve the performance. Importantly, the 2D Hall sensor exhibited a mere ±3odiscrepancy between the measured and reference rotational angles, given the magnetic flux density of 1000 G, with the hysteresis error of 2.8%. In essence, the proposed contactless silicon-based 2D Hall sensor possesses high potential for high-precision industrial applications.

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Monolithic Isotropic 3D Silicon Hall Sensor

Cited by 10 publications

References 46 publications

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Analysis of Orthogonal Coupling Structure Based on Double Three-Contact Vertical Hall Device

Contactless Silicon-Based Multi-Dimensional Hall Sensor with Simultaneous Magnetic Sensing and Omni-Rotational Angle Measurement

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