GeSe thin-film solar cells

Abstract

This review summarizes the recent progress of GeSe thin-film solar cells and provides a brief outlook for their further development.

An effective combination reaction involved with sputtered and selenized Sb precursors for efficient Sb2Se3 thin film solar cells

“…In general, the C-V measured doping density (N C-V ) includes free carriers, bulk defects and interfacial defects, whilst the DLCP measured doping density (N DLCP ) only represents responses from free carriers and bulk defects. [46] Therefore, the interfacial defect density of the device can be calculated as the subtraction of N DLCP from N C-V . The plots of N C-V and N DLCP against the profiling depth x can be expressed as the following equations,…”

An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

“…Its sublimation characteristic enables in-situ self purification of the raw material, leaving impurities in the sublimation source during film deposition 24 . Since GeSe (s) sublimes to GeSe (g) without decomposing into elemental species, it avoids the formation of undesired Ge and Se interstitials 30 . Whether or not GeSe can exhibit defect tolerance analogous to that of Pb-based perovskites, especially in light of its perovskite-like n s 2 electronic configuration, has so far remained unclear.…”

Room‐Temperature Solution‐Processed PbS Quantum Dot Solar Cells

“…Specifically, they have the following advantages: (i) tunable bandgap through quantum size effects enabling optimal matching of the absorbance for single-junction solar cells to solar spectrum while permitting multiple-junction devices for further high efficiency; (ii) multiple exciton generation (MEG) effect reducing thermalization losses and further improving the spectral utilization; (iii) solution-processed fabrication achieving low-cost spray-coating or inkjet printing as well as roll-to-roll processing. [1][2][3][4][5][6][7][8][9] With the advances of ligand engineering, [10] surface passivation [11,12] and device architecture optimization, [13] the power conversion efficiencies (PCEs) of PbS CQD solar cells have been improved significantly throughout the last several decades. [11,[14][15][16][17][18][19][20][21][22][23][24] Recently, a certified 12.3% PCE of PbS CQD solar cells has been achieved, [23] indicating the great potential for future commercial applications.…”

“…Colloidal quantum dots (CQDs), especially PbS CQDs, have become the promising light‐absorbing materials for high‐efficiency photovoltaic devices. Specifically, they have the following advantages: (i) tunable bandgap through quantum size effects enabling optimal matching of the absorbance for single‐junction solar cells to solar spectrum while permitting multiple‐junction devices for further high efficiency; (ii) multiple exciton generation (MEG) effect reducing thermalization losses and further improving the spectral utilization; (iii) solution‐processed fabrication achieving low‐cost spray‐coating or inkjet printing as well as roll‐to‐roll processing . With the advances of ligand engineering, surface passivation and device architecture optimization, the power conversion efficiencies (PCEs) of PbS CQD solar cells have been improved significantly throughout the last several decades .…”