GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits

The growth rate and alloy composition of Si1−xGex layers grown in an industrial chemical vapor deposition (CVD) system have been analyzed as functions of the process parameters at a pressure enabling selective epitaxial growth. We systematically investigate the growth of Si1−xGex with 0.48<x<0.8, using GeH4∕SiCl2H2 partial pressure ratios up to 1.12, where the GeH4 flow was constant and the SiCl2H2 flow was varied. Epitaxial growth temperatures spanned from 350to600°C. The growth rate and alloy composition were limited by the surface reaction step with an activation energy of 1eV∕mol. A significant growth rate reduction is observed when increasing Si content. This feature is consistent with a passivation of the surface Si bonds with H and Cl atoms typical of chemical vapor deposition Si1−xGex layer growth. It is found empirically that x∕(1−x)∝pDCSΔn, Δn=0.32, where x is the Ge mole fraction and pDCS is the SiCl2H2 partial pressure. Then we tentatively develop a model to support the empirical laws found without making any assumption on the mechanism and we extend it to the full compositional range of CVD grown Si–Ge alloys.

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GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits

Cited by 3 publications

References 141 publications

Crying Wulff on vapor–solid distributions of crystallogen chemical vapor deposition via p-block element hydride thermal decomposition

Crying Wulff on vapor–solid distributions of crystallogen chemical vapor deposition via p-block element hydride thermal decomposition

Self-limited SiH2Cl2 gas source molecular beam epitaxy on Si(100)

Kinetics of Si incorporation into a Ge matrix for Si1−xGex layers grown by chemical vapor deposition

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