2020
DOI: 10.1103/physrevlett.125.116403
|View full text |Cite
|
Sign up to set email alerts
|

Giant Exciton Mott Density in Anatase TiO2

Abstract: Elucidating the carrier density at which strongly bound excitons dissociate into a plasma of uncorrelated electron-hole pairs is a central topic in the many-body physics of semiconductors. However, there is a lack of information on the high-density response of excitons absorbing in the near-to-mid ultraviolet, due to the absence of suitable experimental probes in this elusive spectral range. Here, we present a unique combination of many-body perturbation theory and state-of-the-art ultrafast broadband ultravio… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
6
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 13 publications
(7 citation statements)
references
References 73 publications
1
6
0
Order By: Relevance
“…3 . The persistence of such excitonic feature at carrier density above the Mott density is most likely due to the formation of Mahan excitons, which were also reported in other materials with large exciton binding energies 47 . As shown in Supplementary Fig.…”
Section: Resultssupporting
confidence: 69%
See 2 more Smart Citations
“…3 . The persistence of such excitonic feature at carrier density above the Mott density is most likely due to the formation of Mahan excitons, which were also reported in other materials with large exciton binding energies 47 . As shown in Supplementary Fig.…”
Section: Resultssupporting
confidence: 69%
“…3d ). This implies that exciton peak energy blue shifts as the hole density in CuI thin film increases, mainly due to the enhanced Coulomb screening induced reduction in exciton binding energy ( E b ), similar to that observed in anatase TiO 2 47 . The energy difference between the valence band edge E V and the Fermi level E F (i.e., E V - E F ) was calculated by using , where N is the hole density in the valence band, m h is the density of state hole effective mass ( ) which is found to be around 2.47 m e for CuI 16 , k B is the Boltzmann constant, T is the temperature, ℏ is the Plank constant, F 1/2 is the Fermi-Dirac integral which was calculated by method proposed by Bednarczyk et al 48 .…”
Section: Resultsmentioning
confidence: 55%
See 1 more Smart Citation
“…In particular, the optoelectronic properties of both anatase and rutile polymorphs of TiO 2 have been intensely investigated for the prospects of using it in light-energy conversion applications. 3 5 TiO 2 is widely accepted as an n-type semiconductor with a wide indirect band gap. 6 Photoexcitation of anatase TiO 2 has been reported to generate a large number of strongly bound excitons that display an intermediate character between the Wannier–Mott and Frenkel excitons, that hold a two-dimensional wave-like nature, 7 and are confined in the 001 planes in the 3-dimensional lattice.…”
Section: Introductionmentioning
confidence: 99%
“…Of them, TiO 2 nanoparticles, which could serve both the abovementioned roles, have already revolutionized the fields of photocatalysis and photovoltaics; as evidenced by large numbers of research articles published each year on the use of TiO 2 nanoparticles in both areas. In particular, the optoelectronic properties of both anatase and rutile polymorphs of TiO 2 have been intensely investigated for the prospects of using it in light-energy conversion applications. TiO 2 is widely accepted as an n-type semiconductor with a wide indirect band gap . Photoexcitation of anatase TiO 2 has been reported to generate a large number of strongly bound excitons that display an intermediate character between the Wannier–Mott and Frenkel excitons, that hold a two-dimensional wave-like nature, and are confined in the 001 planes in the 3-dimensional lattice .…”
Section: Introductionmentioning
confidence: 99%