Giant magnetoelectric effect in nonlinear Metglas/PIN-PMN-PT multiferroic heterostructure

Abstract

Articles you may be interested inIn-plane anisotropic effect of magnetoelectric coupled PMN-PT/FePt multiferroic heterostructure: Static and microwave properties APL Mat. 2, 106105 (2014); 10.1063/1.4900815 High non-linear magnetoelectric coefficient in Metglas/PMN-PT laminate composites under zero direct current magnetic bias Time domain analyses of the converse magnetoelectric effect in a multiferroic metallic glass-relaxor ferroelectric heterostructure Appl.

Understanding and designing magnetoelectric heterostructures guided by computation: progresses, remaining questions, and perspectives

“…37,38,41,116,[180][181][182][183][184][185][186][187][188][189][190][191][192] We term these four types of converse magnetoelectric coupling mechanisms as 'charge densities', 'interfacial oxidation', 'exchange coupling', and 'strain transfer', respectively. Note that the change of magnetization (ΔM) can be global (that is, average of an entire heterostructure), which can be measured directly using, for example, a superconducting quantum interference device or indirectly from the Hall transport measurement; the ΔM can also represent the magnetization change within a local surface area (precisely, including surface regions within the probe depth) of the sample, which can be measured through various magnetic domain imaging techniques (see a summary in ref.…”

“…Furthermore, employing a ferroelectric may result in a larger piezostrain via ferroelastic switching (i.e., non-180°polarization switching) 37,38 or structural phase transition. [39][40][41][42][43] A controllable ferroelastic switching, however, is much more difficult to achieve. Phase-field models have been developed to understand how ferroelastic switching in ferroelectrics influences the magnetic domain switching 44 and magnetic domain-wall motion 45 in an overlaid magnet.…”

Voltage control of magnetism in FeGaB/PIN-PMN-PT multiferroic heterostructures for high-power and high-temperature applications

“…[19][20][21][22] The maximum in-plane biaxial strain was $0.25% along [01-1] direction. [24][25][26] Given that the FeGaB film is very thin compared to the PIN-PMN-PT (011) substrate, it would experience the same strain states as the PIN-PMN-PT under electric field. Therefore, large voltage-induced in-plane biaxial strain is expected within the FeGaB film, allowing voltage control of magnetism by strain-mediated magnetoelectric coupling.…”

Electrically tunable microwave properties in NiFeTa/[Pb(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.32(011) magnetoelectric heterostructures

“…These two kinds of piezoelectric substrates are popularly known to possess high anisotropic piezoelectric coefficients, which potentially lead to large electrical tunability of ferromagnetic resonance frequency. 5,8,13,25,43,44 In addition, for the realization of large electrical tuning of resonance frequency in these composite multiferroic heterostructures, the magnetostriction coefficients of the ferromagnetic thin films grown onto such kinds of substrates must be large. 33,43 There have been very few works in the literature employing the ferromagnetic thin films with small magnetostriction coefficients.…”

“…5,8,13,25,43,44 In addition, for the realization of large electrical tuning of resonance frequency in these composite multiferroic heterostructures, the magnetostriction coefficients of the ferromagnetic thin films grown onto such kinds of substrates must be large. 33,43 There have been very few works in the literature employing the ferromagnetic thin films with small magnetostriction coefficients. From fundamental research point of view, a study using thin films with small magnetostriction coefficients provide an additional experimental verification for the explanation of the tuning resonance frequency through strain-mediated magnetoelectric coupling between ferromagnetic and ferroelectric phases.…”