Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation

Sankaranarayanan, Sandeep; Saha, D.

doi:10.1016/j.spmi.2016.08.017

Cited by 7 publications

(13 citation statements)

References 18 publications

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“…The detailed hysteresis of NDR behavior is shown in Figure S14, Supporting Information. It is considered that both sweep directions for NDR behavior are better proofs for Esaki diodes . The zoom-in I DS maps with different V DS and V GS are shown in Figure d, indicating the NDR region and the transition point.…”

Section: Resultsmentioning

confidence: 99%

“…It is considered that both sweep directions for NDR behavior are better proofs for Esaki diodes. 43 The zoom-in I DS maps with different V DS and V GS are shown in Figure 4d, indicating the NDR region and the transition point. Transition from the normal I DS −V DS curve to NDR behavior is realized by sweep V GS from −2.4 to −2.1 V. After further sweeping of V GS from −2.1 to −1.9 V, the NDR behavior switches back to the normal I DS −V DS curve.…”

Section: ■ Introductionmentioning

confidence: 97%

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Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS₂ Heterojunction

Tian

Yan

et al. 2021

ACS Appl. Mater. Interfaces

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Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D films lack sufficient gate tunability, and the tuning of NDR behavior from appearing to vanishing remains elusive. Here, a gate-tunable NDR device is reported based on a vertically stacked black phosphorus (BP) and molybdenum disulfide (MoS2) thin 2D heterojunction. At room temperature, a rectifying ratio of ∼6 orders of magnitude from a reverse rectifying diode to a forward rectifying diode by gate modulation is obtained. Through analyzing the temperature-dependent electrical properties, the tunneling mechanism at a certain gate voltage range is revealed. Moreover, the switchable and continuously gate-tunable NDR behavior is realized with a maximum peak-to-valley ratio of 1.23 at 77 K, as shown in the I DS mappings by sweeping V DS under different V GS. In addition, a compact model for gate-tunable NDR behavior in 2D heterostructures is proposed. To our best knowledge, this is the first demonstration of NDR behavior in BP-MoS2 heterostructures. Consequently, this work sheds light on the gate-tunable NDR devices and reconfigurable logic devices for realizing ternary and reconfigurable logic systems.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 97%

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS₂ Heterojunction

Tian

Yan

et al. 2021

ACS Appl. Mater. Interfaces

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“…Several calculations have been carried out to address the effect of these internal fields on the ballistic transport in III-nitride double-barrier structures [36]. Most other simulation works have been focused on improving the peak-to-valley current ratio (PVCR) and peak current density of nitride RTDs by either introducing innovative layer structures or weakening the internal fields [35,[37][38][39][40][41][42][43][44][45][46][47][48][49].…”

Section: Resonant Tunneling In Iii-nitrides-simulation Approachesmentioning

confidence: 99%

III-nitrides based resonant tunneling diodes

Lin

Wang

Tong

et al. 2020

J. Phys. D: Appl. Phys.

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Resonant tunneling diodes are nano-devices which have characteristics of negative differential resistance. They are widely used in digital and analog circuits to reduce components and decrease power consumption. In recent years, resonant tunneling diodes have been found to be an important choice for implementing terahertz device. GaN-based resonant tunneling diodes have inherited the advantages of III-nitride, such as high operating frequency, high power, high temperature resistance, etc, which has become a research hotspot. This paper introduces the basic situation of resonant tunneling diodes, reviews the progress of simulation and experiment, analyzes the influence of polarization field, and presents the challenges. The analysis provided in this paper may help the audience to become more familiar with current research efforts, as well as to provide inspiration for future III-nitride quantum device designs.

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“…As for the quantum devices for pure electron applications, dimensions of quantum well and barrier layers are much thinner than those of quantum devices for optical applications [1][2][3][4][5][6], which leads to much more significant quantum size effect since the dimensions of quantum well and barrier layers are much more closer to their de Broglie wavelengthes respectively on one hand and inner band carrier transportation mechanism dominants when sub-band energy level split occurs on the other hand.…”

Section: Introductionmentioning

confidence: 99%

A novel quantum well RTD with intensive and continuous current oscillation in the bias voltage range higher than 3.15 V

Zhang,

Ma,

Bai

et al. 2024

Workshop on Electronics Communication Engineering (WECE 2023)

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Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation

Cited by 7 publications

References 18 publications

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS₂ Heterojunction

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS₂ Heterojunction

III-nitrides based resonant tunneling diodes

A novel quantum well RTD with intensive and continuous current oscillation in the bias voltage range higher than 3.15 V

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Giant peak to valley ratio in a GaN based resonant tunnel diode with barrier width modulation

Cited by 7 publications

References 18 publications

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction

III-nitrides based resonant tunneling diodes

A novel quantum well RTD with intensive and continuous current oscillation in the bias voltage range higher than 3.15 V

Contact Info

Product

Resources

About

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS₂ Heterojunction

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS₂ Heterojunction