Giant Photoamplification in Indirect‐Bandgap Multilayer MoS<sub>2</sub> Phototransistors with Local Bottom‐Gate Structures

Kwon, Jung‐Hye; Hong, Young Ki; Han, Gyuchull; Omkaram, I.; Choi, Woong; Kim, Sunkook; Yoon, Youngki

doi:10.1002/adma.201404367

Cited by 115 publications

(76 citation statements)

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“…In summary, we have demonstrated the growth of inplane WS 2 /MoS 2 heterostructures with high crystalline and subnanometer interfaces by a shortcut growth strategy using low-cost and soluble salts (NH 4 …”

Section: Communicationmentioning

confidence: 99%

“…However, at present, feasible synthetic process to realize inplane heteroepitaxial growth with subnanometer interface is still of a considerable challenge. [19][20][21][22] Here, we demonstrate a simplifi ed one-step ambient pressure chemical vapor deposition (APCVD) process for the formation of high-quality interconnected WS 2 /MoS 2 in-plane heterostructures using ammonium molybdate tetrahydrate (NH 4 2 heterostructures are studied and verifi ed by Raman and photoluminescence (PL) spectra as well as transmission electron microscopy (TEM). Moreover, scanning Kelvin probe force microscopy (SKPFM) is adopted to quantitatively analyze the built-in potential of the lateral WS 2 /MoS 2 heterostructure.…”

Section: Doi: 101002/adma201502375mentioning

confidence: 99%

“…[ 1 ] Their relatively large band gap, transition from indirect to direct band gap with the thickness decreasing to monolayer, [ 2 ] and peculiar spin and valley physics arising from the strong spin-orbit coupling, [ 3 ] make them offer exciting opportunities for new kinds of low power digital electronic and optoelectronic devices. [3][4][5][6][7][8][9][10][11][12][13] Moreover, these atomic MX 2 monolayers can be stacked/combined to create novel vertical [14][15][16][17][18] or lateral [19][20][21][22] heterostructures with unique geometrical features and energy band alignments, [ 23 ] which provide a route to create various heterojunctions and superlattices with fancy properties. The strong light-matter interaction and direct band gap property of TMDs make the heterostructures of TMDs promising candidates to construction of next-generation photodiodes, [ 24 ] light-emitting, [ 25 ] lightharvesting, [ 23 ] and valleytronic devices.…”

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confidence: 99%

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Lateral Built‐In Potential of Monolayer MoS₂–WS₂ In‐Plane Heterostructures by a Shortcut Growth Strategy

et al. 2015

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Section: Communicationmentioning

confidence: 99%

Section: Doi: 101002/adma201502375mentioning

confidence: 99%

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Lateral Built‐In Potential of Monolayer MoS₂–WS₂ In‐Plane Heterostructures by a Shortcut Growth Strategy

et al. 2015

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“…2D materials like graphene, transition metal dichalcogenides (TMDs) and black phosphorus have proven their utility in various applications such as field-effect transistors (FETs) [1], [2], memory devices [3], and optoelectronics applications [4], [5]. Due to its high carrier mobility and saturation velocity [6], [7], recent graphene research has been mainly focused on high-frequency applications [6].…”

Section: Introductionmentioning

confidence: 99%

Performance Limit Projection of Germanane Field-Effect Transistors

AlMutairi

Zhao

Yin

et al. 2017

IEEE Electron Device Lett.

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Abstract-Here we explore the performance limit of monolayer germanane (GeH) field-effect transistors (FETs). We first plotted an electronic band structure of GeH using density functional theory (DFT) and then tight-binding parameters were extracted. Device characteristics of GeH FETs are investigated using rigorous self-consistent atomistic quantum transport simulations within tight-binding approximations. Our simulation results indicate that GeH FETs can exhibit exceptional on-state device characteristics such as high I on (>2 mA/µm) and large g m (~7 mS/µm) with V DD = 0.5 V due to the very light effective mass of GeH (0.07m 0 ), while maintaining excellent switching characteristics (SS ~64 mV/dec). We have also performed a scaling study by varying the channel length, and it turned out that GeH FET can be scaled down to ~14 nm channel without facing significant short channel effects but it may suffer from large leakage current at the channel length shorter than 10 nm. channel material have rarely explored although it has great potential for future electronic devices toward various applications. The performance of GeH FET was estimated previously by semi-classical model [10], but such a simple approach can be significantly limited in predicting the detailed characteristics of germanane device, where quantum-mechanical treatment will be critical to discuss tunneling and scaling. Therefore, in this work, we investigate the performance limit of GeH FET using rigorous self-consistent atomistic quantum transport simulations. Our simulation results exhibit superior on-state characteristics of GeH FET with excellent switching behaviors. However, due to the very light effective mass, the scaling of GeH FET can be significantly limited as it suffers from large leakage current. We have also benchmarked GeH FET against MoS 2 counterpart, which indicates that GeH FET has clear benefits for high-performance applications compared to a similar device based on MoS 2 . II. SIMULATION METHODSDensity functional theory (DFT) calculation [11] was utilized to obtain the band structure of GeH. Generalized gradient approximations (GGA) exchange correlation function using PBE parameterization was employed for the DFT calculation. For a geometry optimization, conjugate-gradients (CG) was used with maximum force tolerance of 10 -3 eV/Å and energy tolerance of 10 -4 eV. The unit cell of germanane contains two germanium atoms and two hydrogen atoms as shown in the inset of Fig. 1 (a). The Brillouin zone sampling was done using Monkhorst-Pack approach with a 50×50×1 mesh. The calculated band structure is shown in Fig. 1(a This is the author's version of an article that has been published in this journal. Changes were made to this version by the publisher prior to publication.The final version of record is available at http://dx

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“…So far, many studies were mainly devoted to enhance figure-of-merits (e.g. responsivity and specific detectivity) of TMDCs-based photodetectors by adopting a surface plasmonic nanostructure23, a unique device structure24, and various organic and inorganic over-layers25262728, However, color-selectivity or wavelength tunable capability in visible range is another essential feature required for image sensor applications2930. Yet, for our best knowledge, none of results has been reported on color-selectivity of TMDCs-based photodetector by integrating color-filters.…”

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confidence: 99%

Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters

Yoo

Choi

Park

et al. 2017

Sci Rep

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Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 phototransistors on a polyarylate substrate exhibit decent electrical characteristics (μFE > 64.4 cm2/Vs, on/off ratio > 106), and the integrated F-P filters, being able to cover whole visible spectrum, successfully modulate the spectral response characteristics of MoS2 phototransistors from ~495 nm (blue) to ~590 nm (amber). Furthermore, power dependence of both responsivity and specific detectivity shows similar trend with other reports, dominated by the photogating effect. When combined with large-area monolayer MoS2 for optical property enhancement and array processing, our results can be further developed into ultra-thin flexible photodetectors for wearables, conformable image sensor, and other optoelectronic applications.

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Giant Photoamplification in Indirect‐Bandgap Multilayer MoS₂ Phototransistors with Local Bottom‐Gate Structures

Cited by 115 publications

References 27 publications

Lateral Built‐In Potential of Monolayer MoS₂–WS₂ In‐Plane Heterostructures by a Shortcut Growth Strategy

Lateral Built‐In Potential of Monolayer MoS₂–WS₂ In‐Plane Heterostructures by a Shortcut Growth Strategy

Performance Limit Projection of Germanane Field-Effect Transistors

Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters

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Giant Photoamplification in Indirect‐Bandgap Multilayer MoS2 Phototransistors with Local Bottom‐Gate Structures

Cited by 115 publications

References 27 publications

Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy

Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy

Performance Limit Projection of Germanane Field-Effect Transistors

Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters

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Product

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Giant Photoamplification in Indirect‐Bandgap Multilayer MoS₂ Phototransistors with Local Bottom‐Gate Structures

Lateral Built‐In Potential of Monolayer MoS₂–WS₂ In‐Plane Heterostructures by a Shortcut Growth Strategy

Lateral Built‐In Potential of Monolayer MoS₂–WS₂ In‐Plane Heterostructures by a Shortcut Growth Strategy