Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

Arsh, A.; Klebanov, M.; Lyubin, V.; Shapiro, Lev; Feigel, Alexander; Veinger, M.; Sfez, B.

doi:10.1016/j.optmat.2003.12.013

Cited by 26 publications

(8 citation statements)

References 14 publications

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“…Chalcogenide glasses have received a great deal of attention for the last two decades due to their technological applications, namely electronic, optoelectronic, optical and memory switching devices, guided wave devices and infrared telecommunication systems [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

et al. 2011

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The ac conductivity and dielectric properties of Ge 15 Se 60 X 25 (X = As or Sn) thin films are reported in this paper. The thin films were deposited by thermal evaporation at 10 −5 Torr pressure. The films were well characterized by X-ray diffraction, differential thermal analysis and energy dispersive X-ray spectroscopy. The ac conductivity was measured over temperature range 303-413 K and frequency range 10 2 -10 5 Hz. The frequency dependence of the ac conductivity was found to be linear with slope which lies very close to unity and is independent of temperature. This behavior can be explained in terms of the correlated barrier hopping between centers forming intimate valence alternation pairs. Values of the dielectric constant ε 1 were found to decrease with frequency and increase with temperature. The maximum barrier height W m for each sample, which was calculated from the dielectric measurements according to the Guinitin equation, agrees with the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized state near the Fermi level was estimated for the studied films.

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Section: Introductionmentioning

confidence: 99%

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

et al. 2011

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“…Two decades later, multiple MBIL exposures were proposed to generate more complex 2D patterns in a photoresist [138]. Since then, a wide range of structures have been recorded via MBIL using near-infrared [129,[139][140][141][142], visible light [18,31,32,62,88,[143][144][145][146][147][148][149][150][151][152][153], ultraviolet (UV) [62,77,78,99,115,[154][155][156][157][158][159][160], deep-UV [92,101,142,[161][162][163], and extreme-UV sources [164][165][166][167].…”

Section: Multi-beam Interference Lithography and Nano-electronicsmentioning

confidence: 99%

Multi-Beam Interference Advances and Applications: Nano-Electronics, Photonic Crystals, Metamaterials, Subwavelength Structures, Optical Trapping, and Biomedical Structures

Burrow

Gaylord

2011

Micromachines

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Abstract:Research in recent years has greatly advanced the understanding and capabilities of multi-beam interference (MBI). With this technology it is now possible to generate a wide range of one-, two-, and three-dimensional periodic optical-intensity distributions at the micro-and nano-scale over a large length/area/volume. These patterns may be used directly or recorded in photo-sensitive materials using multi-beam interference lithography (MBIL) to accomplish subwavelength patterning. Advances in MBI and MBIL and a very wide range of applications areas including nano-electronics, photonic crystals, metamaterials, subwavelength structures, optical trapping, and biomedical structures are reviewed and put into a unified perspective.

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“…Photosensitivity is often much more significant in case when ChG is used in a thin film form (in dependence on the method and conditions of the thin film's deposition). Common photosensitivity together with generally low resistance of ChGs to the alkaline solutions can result in selective etching in both inorganic [2,3] and organic solutions [4,5]. Selectivity of the etching process can be significantly enhanced by photoinduced Ag dissolution into the exposed thin film [6].…”

Section: Introductionmentioning

confidence: 99%

Selective wet etching of amorphous As2Se3 thin films

Loghina

Pálka

Buzek

et al. 2015

Journal of Non-Crystalline Solids

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Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

Cited by 26 publications

References 14 publications

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Multi-Beam Interference Advances and Applications: Nano-Electronics, Photonic Crystals, Metamaterials, Subwavelength Structures, Optical Trapping, and Biomedical Structures

Selective wet etching of amorphous As2Se3 thin films

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Glassy mAs2S3·nAs2Se3 photoresist films for interference laser lithography

Cited by 26 publications

References 14 publications

Ac Conductivity and Dielectric Properties of Amorphous Ge15Se60X25( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge15Se60X25( X = As or Sn) Films

Multi-Beam Interference Advances and Applications: Nano-Electronics, Photonic Crystals, Metamaterials, Subwavelength Structures, Optical Trapping, and Biomedical Structures

Selective wet etching of amorphous As2Se3 thin films

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Product

Resources

About

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films