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Optical study of thermally induced phase separation in evaporated SiOx films

“…Thus, summing all mentioned above, we may conclude that the films annealed at 1000°C represent Si nano- A substantial increase in the intensity of the bands of longitudinal optical (LO) phonons due to the heat treatment was observed previously [3,13]. This effect may be associated with the heterogeneity of the annealed film due to formation of the phases of variable composition.…”

“…The method of light-emitting structures formation by vacuum thermal evaporation of SiO is very promising for the fabrication of large-area Si-based displays. The annealing-induced variations in characteristics of SiO x layers obtained by vacuum evaporation have been investigated in detail [12,13]. As a rule, the heat treatment was carried out in an oxidizing medium (usually in air).…”

Short-range order in amorphous SiOx by x ray photoelectron spectroscopy

“…5 In these compounds, the silicon atom is coordinated by four O or Si atoms and the O atom is coordinated by two Si atoms. The atomic and electronic structure of SiO x was studied by photoelectron spectroscopy, 6 high-resolution transmission electron microscopy, 6 secondary ion mass spectrometry, 6 photoemission spectroscopy, 7 infrared spectroscopy, 8 optical methods, 9 and electron paramagnetic resonance. 10 Nevertheless, there is no universal model for SiO x electron structure.…”